Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Shuailong Zhang; Enyuan Xie; Tongxin Yan; Wei Yang; Johannes Herrnsdorf; Zheng Gong; Ian M. Watson; Erdan Gu; Martin Dawson; Xiaodong Hu

doi:10.1063/1.4931575

Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Shuailong Zhang, Enyuan Xie, Tongxin Yan, Wei Yang, Johannes Herrnsdorf, Zheng Gong, Ian M. Watson, Erdan Gu, Martin Dawson, Xiaodong Hu

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Abstract

The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

Original language	English
Article number	125709
Number of pages	7
Journal	Journal of Applied Physics
Volume	118
Issue number	12
DOIs	https://doi.org/10.1063/1.4931575
Publication status	Published - 29 Sept 2015

Keywords

quantum wells
piezoelectric fields
light emitting diods
charge injection

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10.1063/1.4931575

Zhang-etal-JAP-2015-Hole-transport-assisted-by-the-piezoelectric-fieldAccepted author manuscript, 1.4 MB

Ultra-Parallel Visible Light Communications (UP-VLC)
Dawson, M. (Principal Investigator), Calvez, S. (Co-investigator) & Watson, I. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/10/12 → 28/02/17
Project: Research
Hybrid organic semiconductor / gallium nitride / CMOS smart pixels arrays
Dawson, M. (Principal Investigator), Girkin, J. (Co-investigator), Gu, E. (Co-investigator), Pethrick, R. (Co-investigator), Skabara, P. (Co-investigator) & Watson, I. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/08/08 → 30/09/12
Project: Research

Data for Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection
Zhang, S. (Creator), Xie, E. (Creator), Yan, T. (Creator), Yang, W. (Creator), Herrnsdorf, J. (Creator), Gong, Z. (Creator), Watson, I. (Creator), Gu, E. (Creator), Dawson, M. (Creator) & Hu, X. (Creator), University of Strathclyde, 2 Oct 2015
DOI: 10.15129/c65de283-9f32-4204-8efb-e11521940ca6
Dataset

Cite this

@article{2ac683725a9e485381ed99ee614c2f48,

title = "Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection",

abstract = "The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.",

keywords = "quantum wells, piezoelectric fields, light emitting diods, charge injection",

author = "Shuailong Zhang and Enyuan Xie and Tongxin Yan and Wei Yang and Johannes Herrnsdorf and Zheng Gong and Watson, {Ian M.} and Erdan Gu and Martin Dawson and Xiaodong Hu",

year = "2015",

month = sep,

day = "29",

doi = "10.1063/1.4931575",

language = "English",

volume = "118",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

AU - Zhang, Shuailong

AU - Xie, Enyuan

AU - Yan, Tongxin

AU - Yang, Wei

AU - Herrnsdorf, Johannes

AU - Gong, Zheng

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Dawson, Martin

AU - Hu, Xiaodong

PY - 2015/9/29

Y1 - 2015/9/29

N2 - The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

AB - The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

KW - quantum wells

KW - piezoelectric fields

KW - light emitting diods

KW - charge injection

U2 - 10.1063/1.4931575

DO - 10.1063/1.4931575

M3 - Article

SN - 0021-8979

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 125709

ER -

Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Abstract

Keywords

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Projects

Ultra-Parallel Visible Light Communications (UP-VLC)

Hybrid organic semiconductor / gallium nitride / CMOS smart pixels arrays

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Data for Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

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