Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Shuailong Zhang, Enyuan Xie, Tongxin Yan, Wei Yang, Johannes Herrnsdorf, Zheng Gong, Ian M. Watson, Erdan Gu, Martin Dawson, Xiaodong Hu

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Abstract

The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.
Original languageEnglish
Article number125709
Number of pages7
JournalJournal of Applied Physics
Volume118
Issue number12
DOIs
Publication statusPublished - 29 Sep 2015

Keywords

  • quantum wells
  • piezoelectric fields
  • light emitting diods
  • charge injection

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