Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Shuailong Zhang, Enyuan Xie, Tongxin Yan, Wei Yang, Johannes Herrnsdorf, Zheng Gong, Ian M. Watson, Erdan Gu, Martin Dawson, Xiaodong Hu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.
LanguageEnglish
Article number125709
Number of pages7
JournalJournal of Applied Physics
Volume118
Issue number12
DOIs
Publication statusPublished - 29 Sep 2015

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indium
quantum wells
injection
current density
electroluminescence
light emitting diodes
screening
penetration
pixels
physics
simulation

Keywords

  • quantum wells
  • piezoelectric fields
  • light emitting diods
  • charge injection

Cite this

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title = "Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection",
abstract = "The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40{\%}. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.",
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Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection. / Zhang, Shuailong; Xie, Enyuan; Yan, Tongxin; Yang, Wei; Herrnsdorf, Johannes; Gong, Zheng; Watson, Ian M.; Gu, Erdan; Dawson, Martin; Hu, Xiaodong.

In: Journal of Applied Physics, Vol. 118, No. 12, 125709, 29.09.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

AU - Zhang, Shuailong

AU - Xie, Enyuan

AU - Yan, Tongxin

AU - Yang, Wei

AU - Herrnsdorf, Johannes

AU - Gong, Zheng

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Dawson, Martin

AU - Hu, Xiaodong

PY - 2015/9/29

Y1 - 2015/9/29

N2 - The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

AB - The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

KW - quantum wells

KW - piezoelectric fields

KW - light emitting diods

KW - charge injection

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DO - 10.1063/1.4931575

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JO - Journal of Applied Physics

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