High temperature implantation of Tm in GaN

K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R. W. Martin, K. P. O'Donnell

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Thulium ions were implanted into MOCVD grown GaN films with a fluence of 2.5×1015 at/cm2 at temperatures between 20 and 500°C. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated using the Rutherford backscattering/channeling (RBS/C) technique. Whereas for room temperature implantation the implanted layer becomes amorphous, high temperature implantation inhibits amorphisation. For implantation temperatures higher than 300°C the RBS/C results clearly show two different damage regions - one at the surface and the second deeper in the crystal coinciding with the Tm depth profile. Annealing causes a decrease of the surface damage as well as initiating regrowth from the unimplanted bulk GaN. For the samples that were not completely amorphous a large part of the Tm atoms were found to be incorporated in Ga-sites. The optical properties of the ion implanted GaN films have been studied by room temperature cathodoluminescence. Directly following the implantation no Tm-related luminescence was observed. Subsequent annealing of the samples achieved optical activation, revealing well-defined emissions due to intra-4f-shell transitions of the Tm3+ ions in the blue spectral range at 477 nm and in the near infra-red at 804 nm.

Original languageEnglish
Pages (from-to)447-452
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
DOIs
Publication statusPublished - 1 Dec 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 1 Dec 20035 Dec 2003

Keywords

  • Gallium nitride
  • annealing
  • cathodoluminescence
  • crystal orientation
  • ion implantation
  • light emitting diodes
  • metallorganic chemical vapor deposition
  • rutherford backscattering spectroscopy
  • Thulium

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