High temperature implantation of Tm in GaN

K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R. W. Martin, K. P. O'Donnell

Research output: Contribution to journalConference article

Abstract

Thulium ions were implanted into MOCVD grown GaN films with a fluence of 2.5×1015 at/cm2 at temperatures between 20 and 500°C. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated using the Rutherford backscattering/channeling (RBS/C) technique. Whereas for room temperature implantation the implanted layer becomes amorphous, high temperature implantation inhibits amorphisation. For implantation temperatures higher than 300°C the RBS/C results clearly show two different damage regions - one at the surface and the second deeper in the crystal coinciding with the Tm depth profile. Annealing causes a decrease of the surface damage as well as initiating regrowth from the unimplanted bulk GaN. For the samples that were not completely amorphous a large part of the Tm atoms were found to be incorporated in Ga-sites. The optical properties of the ion implanted GaN films have been studied by room temperature cathodoluminescence. Directly following the implantation no Tm-related luminescence was observed. Subsequent annealing of the samples achieved optical activation, revealing well-defined emissions due to intra-4f-shell transitions of the Tm3+ ions in the blue spectral range at 477 nm and in the near infra-red at 804 nm.

Original languageEnglish
Pages (from-to)447-452
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
DOIs
Publication statusPublished - 1 Dec 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 1 Dec 20035 Dec 2003

Fingerprint

Ion implantation
implantation
Rutherford backscattering spectroscopy
Annealing
Ions
damage
annealing
backscattering
Thulium
Temperature
ions
thulium
Cathodoluminescence
Amorphization
Metallorganic chemical vapor deposition
room temperature
cathodoluminescence
metalorganic chemical vapor deposition
Luminescence
fluence

Keywords

  • Gallium nitride
  • annealing
  • cathodoluminescence
  • crystal orientation
  • ion implantation
  • light emitting diodes
  • metallorganic chemical vapor deposition
  • rutherford backscattering spectroscopy
  • Thulium

Cite this

Lorenz, K. ; Wahl, U. ; Alves, E. ; Dalmasso, S. ; Martin, R. W. ; O'Donnell, K. P. / High temperature implantation of Tm in GaN. In: Materials Research Society Symposium - Proceedings. 2003 ; Vol. 798. pp. 447-452.
@article{e2fa3142ec9b4921af043cadca96d923,
title = "High temperature implantation of Tm in GaN",
abstract = "Thulium ions were implanted into MOCVD grown GaN films with a fluence of 2.5×1015 at/cm2 at temperatures between 20 and 500°C. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated using the Rutherford backscattering/channeling (RBS/C) technique. Whereas for room temperature implantation the implanted layer becomes amorphous, high temperature implantation inhibits amorphisation. For implantation temperatures higher than 300°C the RBS/C results clearly show two different damage regions - one at the surface and the second deeper in the crystal coinciding with the Tm depth profile. Annealing causes a decrease of the surface damage as well as initiating regrowth from the unimplanted bulk GaN. For the samples that were not completely amorphous a large part of the Tm atoms were found to be incorporated in Ga-sites. The optical properties of the ion implanted GaN films have been studied by room temperature cathodoluminescence. Directly following the implantation no Tm-related luminescence was observed. Subsequent annealing of the samples achieved optical activation, revealing well-defined emissions due to intra-4f-shell transitions of the Tm3+ ions in the blue spectral range at 477 nm and in the near infra-red at 804 nm.",
keywords = "Gallium nitride, annealing, cathodoluminescence, crystal orientation, ion implantation, light emitting diodes, metallorganic chemical vapor deposition, rutherford backscattering spectroscopy, Thulium",
author = "K. Lorenz and U. Wahl and E. Alves and S. Dalmasso and Martin, {R. W.} and O'Donnell, {K. P.}",
year = "2003",
month = "12",
day = "1",
doi = "10.1557/PROC-798-Y5.4",
language = "English",
volume = "798",
pages = "447--452",
journal = "MRS Online Proceedings Library",
issn = "1946-4274",

}

High temperature implantation of Tm in GaN. / Lorenz, K.; Wahl, U.; Alves, E.; Dalmasso, S.; Martin, R. W.; O'Donnell, K. P.

In: Materials Research Society Symposium - Proceedings, Vol. 798, 01.12.2003, p. 447-452.

Research output: Contribution to journalConference article

TY - JOUR

T1 - High temperature implantation of Tm in GaN

AU - Lorenz, K.

AU - Wahl, U.

AU - Alves, E.

AU - Dalmasso, S.

AU - Martin, R. W.

AU - O'Donnell, K. P.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Thulium ions were implanted into MOCVD grown GaN films with a fluence of 2.5×1015 at/cm2 at temperatures between 20 and 500°C. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated using the Rutherford backscattering/channeling (RBS/C) technique. Whereas for room temperature implantation the implanted layer becomes amorphous, high temperature implantation inhibits amorphisation. For implantation temperatures higher than 300°C the RBS/C results clearly show two different damage regions - one at the surface and the second deeper in the crystal coinciding with the Tm depth profile. Annealing causes a decrease of the surface damage as well as initiating regrowth from the unimplanted bulk GaN. For the samples that were not completely amorphous a large part of the Tm atoms were found to be incorporated in Ga-sites. The optical properties of the ion implanted GaN films have been studied by room temperature cathodoluminescence. Directly following the implantation no Tm-related luminescence was observed. Subsequent annealing of the samples achieved optical activation, revealing well-defined emissions due to intra-4f-shell transitions of the Tm3+ ions in the blue spectral range at 477 nm and in the near infra-red at 804 nm.

AB - Thulium ions were implanted into MOCVD grown GaN films with a fluence of 2.5×1015 at/cm2 at temperatures between 20 and 500°C. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated using the Rutherford backscattering/channeling (RBS/C) technique. Whereas for room temperature implantation the implanted layer becomes amorphous, high temperature implantation inhibits amorphisation. For implantation temperatures higher than 300°C the RBS/C results clearly show two different damage regions - one at the surface and the second deeper in the crystal coinciding with the Tm depth profile. Annealing causes a decrease of the surface damage as well as initiating regrowth from the unimplanted bulk GaN. For the samples that were not completely amorphous a large part of the Tm atoms were found to be incorporated in Ga-sites. The optical properties of the ion implanted GaN films have been studied by room temperature cathodoluminescence. Directly following the implantation no Tm-related luminescence was observed. Subsequent annealing of the samples achieved optical activation, revealing well-defined emissions due to intra-4f-shell transitions of the Tm3+ ions in the blue spectral range at 477 nm and in the near infra-red at 804 nm.

KW - Gallium nitride

KW - annealing

KW - cathodoluminescence

KW - crystal orientation

KW - ion implantation

KW - light emitting diodes

KW - metallorganic chemical vapor deposition

KW - rutherford backscattering spectroscopy

KW - Thulium

UR - http://www.scopus.com/inward/record.url?scp=2942722510&partnerID=8YFLogxK

U2 - 10.1557/PROC-798-Y5.4

DO - 10.1557/PROC-798-Y5.4

M3 - Conference article

VL - 798

SP - 447

EP - 452

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 1946-4274

ER -