High temperature annealing and optical activation of Eu implanted GaN

K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R.W. Martin, K.P. O'Donnell, S. Ruffenach, O. Briot

Research output: Contribution to journalArticle

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Abstract

Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that protects the GaN surface during the implantation and also serves as a capping layer during the subsequent furnace annealing. Employing this AlN layer prevents the formation of an amorphous surface layer during the implantation. Furthermore, no dissociation of the crystal was observed by Rutherford backscattering and channeling measurements for annealing temperatures up to 1300°C. Remarkably, the intensity of the Eu related luminescence, as measured by cathodoluminescence at room temperature, increases by one order of magnitude within the studied annealing range between 1100 and 1300°C.
LanguageEnglish
Pages2712-2714
Number of pages2
JournalApplied Physics Letters
Volume85
Issue number14
DOIs
Publication statusPublished - 4 Oct 2005

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activation
annealing
implantation
europium
cathodoluminescence
furnaces
backscattering
surface layers
dissociation
luminescence
room temperature
crystals
temperature

Keywords

  • high temperature annealing
  • optical activation
  • Eu implanted GaN
  • nanoscience

Cite this

Lorenz, K. ; Wahl, U. ; Alves, E. ; Dalmasso, S. ; Martin, R.W. ; O'Donnell, K.P. ; Ruffenach, S. ; Briot, O. / High temperature annealing and optical activation of Eu implanted GaN. In: Applied Physics Letters. 2005 ; Vol. 85, No. 14. pp. 2712-2714.
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Lorenz, K, Wahl, U, Alves, E, Dalmasso, S, Martin, RW, O'Donnell, KP, Ruffenach, S & Briot, O 2005, 'High temperature annealing and optical activation of Eu implanted GaN' Applied Physics Letters, vol. 85, no. 14, pp. 2712-2714. https://doi.org/10.1063/1.1801686

High temperature annealing and optical activation of Eu implanted GaN. / Lorenz, K.; Wahl, U.; Alves, E.; Dalmasso, S.; Martin, R.W.; O'Donnell, K.P.; Ruffenach, S.; Briot, O.

In: Applied Physics Letters, Vol. 85, No. 14, 04.10.2005, p. 2712-2714.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High temperature annealing and optical activation of Eu implanted GaN

AU - Lorenz, K.

AU - Wahl, U.

AU - Alves, E.

AU - Dalmasso, S.

AU - Martin, R.W.

AU - O'Donnell, K.P.

AU - Ruffenach, S.

AU - Briot, O.

PY - 2005/10/4

Y1 - 2005/10/4

N2 - Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that protects the GaN surface during the implantation and also serves as a capping layer during the subsequent furnace annealing. Employing this AlN layer prevents the formation of an amorphous surface layer during the implantation. Furthermore, no dissociation of the crystal was observed by Rutherford backscattering and channeling measurements for annealing temperatures up to 1300°C. Remarkably, the intensity of the Eu related luminescence, as measured by cathodoluminescence at room temperature, increases by one order of magnitude within the studied annealing range between 1100 and 1300°C.

AB - Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that protects the GaN surface during the implantation and also serves as a capping layer during the subsequent furnace annealing. Employing this AlN layer prevents the formation of an amorphous surface layer during the implantation. Furthermore, no dissociation of the crystal was observed by Rutherford backscattering and channeling measurements for annealing temperatures up to 1300°C. Remarkably, the intensity of the Eu related luminescence, as measured by cathodoluminescence at room temperature, increases by one order of magnitude within the studied annealing range between 1100 and 1300°C.

KW - high temperature annealing

KW - optical activation

KW - Eu implanted GaN

KW - nanoscience

UR - http://dx.doi.org/10.1063/1.1801686

U2 - 10.1063/1.1801686

DO - 10.1063/1.1801686

M3 - Article

VL - 85

SP - 2712

EP - 2714

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -