High-speed resonant gate driver with controlled peak gate voltage for silicon carbide MOSFETs

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Parasitic inductance in the gate path of a silicon carbide MOSFET places an upper limit upon the switching speeds achievable from these devices, resulting in unnecessarily high switching losses due to the introduction of damping resistance into the gate path. A method to reduce switching losses is proposed, using a resonant gate driver to absorb parasitic inductance in the gate path, enabling the gate resistor to be removed. The gate voltage is maintained at the desired level using a feedback loop. Experimental results for a 1200-V silicon carbide MOSFET gate driver are presented, demonstrating the switching loss of 230 μJ at 800 V and 10 A. This represents a 20% reduction in switching losses in comparison to that of conventional gate drive methods.
LanguageEnglish
Pages573-583
Number of pages11
JournalIEEE Transactions on Industry Applications
Volume50
Issue number1
Early online date5 Jun 2013
DOIs
Publication statusPublished - 16 Jan 2014

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Silicon carbide
Electric potential
Inductance
Resistors
Damping
Feedback

Keywords

  • driver circuits
  • power MOSFET
  • silicon compounds
  • parasitic inductance
  • power FETs

Cite this

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title = "High-speed resonant gate driver with controlled peak gate voltage for silicon carbide MOSFETs",
abstract = "Parasitic inductance in the gate path of a silicon carbide MOSFET places an upper limit upon the switching speeds achievable from these devices, resulting in unnecessarily high switching losses due to the introduction of damping resistance into the gate path. A method to reduce switching losses is proposed, using a resonant gate driver to absorb parasitic inductance in the gate path, enabling the gate resistor to be removed. The gate voltage is maintained at the desired level using a feedback loop. Experimental results for a 1200-V silicon carbide MOSFET gate driver are presented, demonstrating the switching loss of 230 μJ at 800 V and 10 A. This represents a 20{\%} reduction in switching losses in comparison to that of conventional gate drive methods.",
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author = "Philip Anthony and Neville McNeill and Derrick Holliday",
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High-speed resonant gate driver with controlled peak gate voltage for silicon carbide MOSFETs. / Anthony, Philip; McNeill, Neville; Holliday, Derrick.

In: IEEE Transactions on Industry Applications, Vol. 50, No. 1, 16.01.2014, p. 573-583.

Research output: Contribution to journalArticle

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AB - Parasitic inductance in the gate path of a silicon carbide MOSFET places an upper limit upon the switching speeds achievable from these devices, resulting in unnecessarily high switching losses due to the introduction of damping resistance into the gate path. A method to reduce switching losses is proposed, using a resonant gate driver to absorb parasitic inductance in the gate path, enabling the gate resistor to be removed. The gate voltage is maintained at the desired level using a feedback loop. Experimental results for a 1200-V silicon carbide MOSFET gate driver are presented, demonstrating the switching loss of 230 μJ at 800 V and 10 A. This represents a 20% reduction in switching losses in comparison to that of conventional gate drive methods.

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KW - power MOSFET

KW - silicon compounds

KW - parasitic inductance

KW - power FETs

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