High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.
LanguageEnglish
Article number141908
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number14
DOIs
Publication statusPublished - 6 Apr 2011

Fingerprint

cathodoluminescence
quantum wells
high resolution
spatial resolution
energy
shift

Keywords

  • cathodoluminescence
  • gallium compounds
  • III-V semiconductors
  • indium compounds
  • MOCVD
  • nanofabrication
  • nanostructured materials
  • red shift
  • semiconductor growth
  • semiconductor quantum wells
  • wide band gap semiconductors

Cite this

@article{343ab868d45b449984f944b65a3e6ea1,
title = "High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures",
abstract = "InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.",
keywords = "cathodoluminescence, gallium compounds, III-V semiconductors, indium compounds, MOCVD, nanofabrication, nanostructured materials, red shift, semiconductor growth, semiconductor quantum wells, wide band gap semiconductors",
author = "Jochen Bruckbauer and Edwards, {Paul R.} and Tao Wang and Martin, {Robert W.}",
year = "2011",
month = "4",
day = "6",
doi = "10.1063/1.3575573",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "14",

}

TY - JOUR

T1 - High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

AU - Bruckbauer, Jochen

AU - Edwards, Paul R.

AU - Wang, Tao

AU - Martin, Robert W.

PY - 2011/4/6

Y1 - 2011/4/6

N2 - InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.

AB - InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.

KW - cathodoluminescence

KW - gallium compounds

KW - III-V semiconductors

KW - indium compounds

KW - MOCVD

KW - nanofabrication

KW - nanostructured materials

KW - red shift

KW - semiconductor growth

KW - semiconductor quantum wells

KW - wide band gap semiconductors

U2 - 10.1063/1.3575573

DO - 10.1063/1.3575573

M3 - Article

VL - 98

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 141908

ER -