High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

Jochen Bruckbauer; Paul R. Edwards; Tao Wang; Robert W. Martin

doi:10.1063/1.3575573

High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

Jochen Bruckbauer, Paul R. Edwards, Tao Wang, Robert W. Martin

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Abstract

InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.

Original language	English
Article number	141908
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	14
DOIs	https://doi.org/10.1063/1.3575573
Publication status	Published - 6 Apr 2011

Keywords

cathodoluminescence
gallium compounds
III-V semiconductors
indium compounds
MOCVD
nanofabrication
nanostructured materials
red shift
semiconductor growth
semiconductor quantum wells
wide band gap semiconductors

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10.1063/1.3575573

High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures
APL
Final published version, 978 KB

Ultra Energy Efficient III-nitride/polymer hybrid white light-emitting-diodes using nanotechnology
Martin, R. & Skabara, P.
EPSRC (Engineering and Physical Sciences Research Council)
1/03/10 → 31/08/13
Project: Research
NMS: EPSRC Science and Innovation Nanometrology for Molecular Science, Medicine and Manufacture
Birch, D., Dawson, M., Faulds, K., Girkin, J., Graham, D., Martin, R., O'Donnell, K., Rolinski, O., Smith, W. & Wynne, K.
Scottish Funding Council SFC, EPSRC (Engineering and Physical Sciences Research Council)
1/08/08 → 31/01/12
Project: Research

Cite this

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title = "High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures",

abstract = "InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.",

keywords = "cathodoluminescence, gallium compounds, III-V semiconductors, indium compounds, MOCVD, nanofabrication, nanostructured materials, red shift, semiconductor growth, semiconductor quantum wells, wide band gap semiconductors",

author = "Jochen Bruckbauer and Edwards, {Paul R.} and Tao Wang and Martin, {Robert W.}",

year = "2011",

month = apr,

day = "6",

doi = "10.1063/1.3575573",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "14",

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TY - JOUR

T1 - High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

AU - Bruckbauer, Jochen

AU - Edwards, Paul R.

AU - Wang, Tao

AU - Martin, Robert W.

PY - 2011/4/6

Y1 - 2011/4/6

N2 - InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.

AB - InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.

KW - cathodoluminescence

KW - gallium compounds

KW - III-V semiconductors

KW - indium compounds

KW - MOCVD

KW - nanofabrication

KW - nanostructured materials

KW - red shift

KW - semiconductor growth

KW - semiconductor quantum wells

KW - wide band gap semiconductors

U2 - 10.1063/1.3575573

DO - 10.1063/1.3575573

M3 - Article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141908

ER -

High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

Abstract

Keywords

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Projects

Ultra Energy Efficient III-nitride/polymer hybrid white light-emitting-diodes using nanotechnology

NMS: EPSRC Science and Innovation Nanometrology for Molecular Science, Medicine and Manufacture

Cite this