High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

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Abstract

InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.
Original languageEnglish
Article number141908
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number14
DOIs
Publication statusPublished - 6 Apr 2011

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Keywords

  • cathodoluminescence
  • gallium compounds
  • III-V semiconductors
  • indium compounds
  • MOCVD
  • nanofabrication
  • nanostructured materials
  • red shift
  • semiconductor growth
  • semiconductor quantum wells
  • wide band gap semiconductors

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