High resolution 128x96 nitride microdisplay

H.W. Choi, C.W. Jeon, M.D. Dawson

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

Matrix-addressable arrays of InGaN micro-light-emitting diodes with 128 /spl times/ 96 pixels and a resolution of 1200 dpi have been fabricated using a novel "sloped sidewall" process. The devices have been fabricated on InGaN blue and green wafers, emitting light at the wavelengths of 468 and 508 nm, respectively. A simple circuit, which enables the display of an arrow pattern with /spl sim/60% of the pixels turned on, was used for device testing. At an injection current of 60 mA, the devices deliver 3.3 (blue) and 2.4 mW (green) of output power, corresponding to a luminance of more than 30 000 Cd/m/sup 2/. These high-brightness and highly versatile devices are certainly an attractive form of emissive micro-display.
Original languageEnglish
Pages (from-to)277-279
Number of pages2
JournalIEEE Electron Device Letters
Volume25
Issue number5
DOIs
Publication statusPublished - 4 May 2004

Keywords

  • III-V semiconductors
  • light emitting diodes
  • microdisplays
  • semiconductor device manufacture
  • semiconductor device testing
  • matrix-addressable arrays micro-light-emitting diodes nitride microdisplay sloped sidewall process

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