High repetition-rate wavelength tuning of an extended cavity diodelaser for gas phase sensing

J. Hult, I.S. Burns, C.F. Kaminski

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A method for rapid wavelength tuning of an extended cavity diode laser (ECDL) is presented providing for high resolution, narrow bandwidth output over limited spectral regions. The method permits tuning over isolated spectroscopic features at repetition rates of tens of kHz, greatly exceeding conventional ECDL tuning speeds. In this paper we present high repetition rate laser induced fluorescence (LIF) spectroscopy of the 5(2)P(1/2) to 6(2)S(1/2) transition in indium at 410 nm, to demonstrate the technique. The presented ECDL design is very easy to implement, cheap and robust, as it employs no moving parts and can be used over all wavelength regions where FP diode lasers are available. This extends the usefulness of standard FP diode lasers to high speed sensing applications. Advantages and disadvantages of the technique are discussed.
LanguageEnglish
Pages757-760
Number of pages4
JournalApplied Physics B: Lasers and Optics
Volume81
Issue number6
DOIs
Publication statusPublished - Oct 2005

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repetition
semiconductor lasers
tuning
vapor phases
cavities
wavelengths
laser induced fluorescence
indium
high speed
bandwidth
output
high resolution
spectroscopy

Keywords

  • high repetition-rate
  • wavelength tuning
  • oextended cavity diodelaser
  • gas phase sensing
  • chemical engineering

Cite this

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abstract = "A method for rapid wavelength tuning of an extended cavity diode laser (ECDL) is presented providing for high resolution, narrow bandwidth output over limited spectral regions. The method permits tuning over isolated spectroscopic features at repetition rates of tens of kHz, greatly exceeding conventional ECDL tuning speeds. In this paper we present high repetition rate laser induced fluorescence (LIF) spectroscopy of the 5(2)P(1/2) to 6(2)S(1/2) transition in indium at 410 nm, to demonstrate the technique. The presented ECDL design is very easy to implement, cheap and robust, as it employs no moving parts and can be used over all wavelength regions where FP diode lasers are available. This extends the usefulness of standard FP diode lasers to high speed sensing applications. Advantages and disadvantages of the technique are discussed.",
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High repetition-rate wavelength tuning of an extended cavity diodelaser for gas phase sensing. / Hult, J.; Burns, I.S.; Kaminski, C.F.

In: Applied Physics B: Lasers and Optics, Vol. 81, No. 6, 10.2005, p. 757-760.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High repetition-rate wavelength tuning of an extended cavity diodelaser for gas phase sensing

AU - Hult, J.

AU - Burns, I.S.

AU - Kaminski, C.F.

PY - 2005/10

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N2 - A method for rapid wavelength tuning of an extended cavity diode laser (ECDL) is presented providing for high resolution, narrow bandwidth output over limited spectral regions. The method permits tuning over isolated spectroscopic features at repetition rates of tens of kHz, greatly exceeding conventional ECDL tuning speeds. In this paper we present high repetition rate laser induced fluorescence (LIF) spectroscopy of the 5(2)P(1/2) to 6(2)S(1/2) transition in indium at 410 nm, to demonstrate the technique. The presented ECDL design is very easy to implement, cheap and robust, as it employs no moving parts and can be used over all wavelength regions where FP diode lasers are available. This extends the usefulness of standard FP diode lasers to high speed sensing applications. Advantages and disadvantages of the technique are discussed.

AB - A method for rapid wavelength tuning of an extended cavity diode laser (ECDL) is presented providing for high resolution, narrow bandwidth output over limited spectral regions. The method permits tuning over isolated spectroscopic features at repetition rates of tens of kHz, greatly exceeding conventional ECDL tuning speeds. In this paper we present high repetition rate laser induced fluorescence (LIF) spectroscopy of the 5(2)P(1/2) to 6(2)S(1/2) transition in indium at 410 nm, to demonstrate the technique. The presented ECDL design is very easy to implement, cheap and robust, as it employs no moving parts and can be used over all wavelength regions where FP diode lasers are available. This extends the usefulness of standard FP diode lasers to high speed sensing applications. Advantages and disadvantages of the technique are discussed.

KW - high repetition-rate

KW - wavelength tuning

KW - oextended cavity diodelaser

KW - gas phase sensing

KW - chemical engineering

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DO - 10.1007/s00340-005-1962-7

M3 - Article

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JO - Applied Physics B: Lasers and Optics

T2 - Applied Physics B: Lasers and Optics

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