High pressure annealing of Europium implanted GaN

Katharina K. Lorenz, S. M C S.M.C. Miranda, E. Jorge E.J. Alves, Iman S. I.S. Roqan, Kevin Peter K.P. O'Donnell, Michał X. M.X. Boćkowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

20 Citations (Scopus)


GaN epilayers were implanted with Eu to fluences of 1×1013 Eu/cm2 and 1×1015 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.
Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Subtitle of host publicationGallium Nitride Materials and Devices VII
Number of pages6
Publication statusPublished - 2012


  • Europium implanted GaN
  • GaN epilayers
  • crystals

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