High pressure annealing of Europium implanted GaN

Katharina K. Lorenz, S. M C S.M.C. Miranda, E. Jorge E.J. Alves, Iman S. I.S. Roqan, Kevin Peter K.P. O'Donnell, Michał X. M.X. Boćkowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

13 Citations (Scopus)

Abstract

GaN epilayers were implanted with Eu to fluences of 1×1013 Eu/cm2 and 1×1015 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.
LanguageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Subtitle of host publicationGallium Nitride Materials and Devices VII
Pages82-87
Number of pages6
Volume8262
DOIs
Publication statusPublished - 2012

Fingerprint

Europium
europium
Annealing
annealing
fluence
Implantation
Ion implantation
Activation
implantation
Chemical activation
activation
Implant
Epilayers
Luminescence
Nitrogen
Crystal
Recovery
Damage
recovery
Ions

Keywords

  • Europium implanted GaN
  • GaN epilayers
  • crystals

Cite this

Lorenz, K. K., Miranda, S. M. C. S. M. C., Alves, E. J. E. J., Roqan, I. S. I. S., O'Donnell, K. P. K. P., & Boćkowski, M. X. M. X. (2012). High pressure annealing of Europium implanted GaN. In Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices VII (Vol. 8262, pp. 82-87). [82620C] https://doi.org/10.1117/12.906810
Lorenz, Katharina K. ; Miranda, S. M C S.M.C. ; Alves, E. Jorge E.J. ; Roqan, Iman S. I.S. ; O'Donnell, Kevin Peter K.P. ; Boćkowski, Michał X. M.X. / High pressure annealing of Europium implanted GaN. Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices VII. Vol. 8262 2012. pp. 82-87
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abstract = "GaN epilayers were implanted with Eu to fluences of 1×1013 Eu/cm2 and 1×1015 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.",
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Lorenz, KK, Miranda, SMCSMC, Alves, EJEJ, Roqan, ISIS, O'Donnell, KPKP & Boćkowski, MXMX 2012, High pressure annealing of Europium implanted GaN. in Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices VII. vol. 8262, 82620C, pp. 82-87. https://doi.org/10.1117/12.906810

High pressure annealing of Europium implanted GaN. / Lorenz, Katharina K.; Miranda, S. M C S.M.C.; Alves, E. Jorge E.J.; Roqan, Iman S. I.S.; O'Donnell, Kevin Peter K.P.; Boćkowski, Michał X. M.X.

Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices VII. Vol. 8262 2012. p. 82-87 82620C.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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AB - GaN epilayers were implanted with Eu to fluences of 1×1013 Eu/cm2 and 1×1015 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.

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Lorenz KK, Miranda SMCSMC, Alves EJEJ, Roqan ISIS, O'Donnell KPKP, Boćkowski MXMX. High pressure annealing of Europium implanted GaN. In Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices VII. Vol. 8262. 2012. p. 82-87. 82620C https://doi.org/10.1117/12.906810