High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry

S. Magalhães, N.P. Barradas, E. Alves, I.M. Watson, K. Lorenz

Research output: Contribution to journalConference Contribution

4 Citations (Scopus)

Abstract

In this work a careful manual analysis of Rutherford backscattering spectrometry spectra is discussed to determine the InN content of Al1-xInxN thin films grown on GaN buffer layers. The main source of error arises from the fact that the low signal of Al is superimposed to the high signal of Ga from the GaN buffer layer. The uncertainties in the derived InN fraction are discussed. Furthermore, it is shown that channelling effects only have a minor influence on the compositional analysis of the studied films although they can significantly reduce the count rate and distort the shape of the spectra.
LanguageEnglish
Pages105-108
Number of pages4
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume273
DOIs
Publication statusPublished - 15 Feb 2012

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Rutherford backscattering spectroscopy
Buffer layers
Spectrometry
backscattering
buffers
Thin films
thin films
spectroscopy
Uncertainty

Keywords

  • Rutherford backscattering spectrometry
  • AlInN
  • composition analysis
  • backscattering spectrometry
  • photonics

Cite this

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abstract = "In this work a careful manual analysis of Rutherford backscattering spectrometry spectra is discussed to determine the InN content of Al1-xInxN thin films grown on GaN buffer layers. The main source of error arises from the fact that the low signal of Al is superimposed to the high signal of Ga from the GaN buffer layer. The uncertainties in the derived InN fraction are discussed. Furthermore, it is shown that channelling effects only have a minor influence on the compositional analysis of the studied films although they can significantly reduce the count rate and distort the shape of the spectra.",
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High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry. / Magalhães, S.; Barradas, N.P.; Alves, E.; Watson, I.M.; Lorenz, K.

In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , Vol. 273, 15.02.2012, p. 105-108.

Research output: Contribution to journalConference Contribution

TY - JOUR

T1 - High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry

AU - Magalhães, S.

AU - Barradas, N.P.

AU - Alves, E.

AU - Watson, I.M.

AU - Lorenz, K.

PY - 2012/2/15

Y1 - 2012/2/15

N2 - In this work a careful manual analysis of Rutherford backscattering spectrometry spectra is discussed to determine the InN content of Al1-xInxN thin films grown on GaN buffer layers. The main source of error arises from the fact that the low signal of Al is superimposed to the high signal of Ga from the GaN buffer layer. The uncertainties in the derived InN fraction are discussed. Furthermore, it is shown that channelling effects only have a minor influence on the compositional analysis of the studied films although they can significantly reduce the count rate and distort the shape of the spectra.

AB - In this work a careful manual analysis of Rutherford backscattering spectrometry spectra is discussed to determine the InN content of Al1-xInxN thin films grown on GaN buffer layers. The main source of error arises from the fact that the low signal of Al is superimposed to the high signal of Ga from the GaN buffer layer. The uncertainties in the derived InN fraction are discussed. Furthermore, it is shown that channelling effects only have a minor influence on the compositional analysis of the studied films although they can significantly reduce the count rate and distort the shape of the spectra.

KW - Rutherford backscattering spectrometry

KW - AlInN

KW - composition analysis

KW - backscattering spectrometry

KW - photonics

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U2 - 10.1016/j.nimb.2011.07.051

DO - 10.1016/j.nimb.2011.07.051

M3 - Conference Contribution

VL - 273

SP - 105

EP - 108

JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

T2 - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

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