High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0µm

J.M. Hopkins, N. Hempler, B. Rosener, N. Schulz, M. Rattunde, C. Manz, K. Kohler, J. Wagner, David Burns

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Abstract

We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 m. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 m. The beam propagation parameter M2 was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.
Original languageEnglish
Pages (from-to)201-203
Number of pages3
JournalOptics Letters
Volume33
Issue number2
DOIs
Publication statusPublished - 15 Jan 2008

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Keywords

  • semiconductor disc laser
  • Halbleiterscheibenlase
  • infrared laser
  • Infrarot-Laser
  • GaSb
  • tunable laser
  • durchstimmbarer Laser
  • vertical-external-cavity surface-emitting laser

Cite this

Hopkins, J. M., Hempler, N., Rosener, B., Schulz, N., Rattunde, M., Manz, C., ... Burns, D. (2008). High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0µm. Optics Letters, 33(2), 201-203. https://doi.org/10.1364/OL.33.000201