High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier

Jehan Akbar, Lianping Hou, Mohsin Haji, Michael Strain, J.H. Marsh, A.C. Bryce, A.E. Kelly

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.
Original languageEnglish
Pages (from-to)253 - 256
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number3
Publication statusPublished - 1 Feb 2013


  • III-V semiconductors
  • aluminium compounds
  • distributed Bragg reflector lasers
  • mode-locked laser
  • optical pulse generation


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