High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier

Jehan Akbar, Lianping Hou, Mohsin Haji, Michael Strain, J.H. Marsh, A.C. Bryce, A.E. Kelly

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.
LanguageEnglish
Pages253 - 256
Number of pages4
JournalIEEE Photonics Technology Letters
Volume25
Issue number3
DOIs
Publication statusPublished - 1 Feb 2013

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DBR lasers
Light amplifiers
Semiconductor optical amplifiers
Laser modes
light amplifiers
Semiconductor quantum wells
Mathematical transformations
output
far fields
repetition
pulse duration
quantum wells
pulses

Keywords

  • III-V semiconductors
  • aluminium compounds
  • distributed Bragg reflector lasers
  • mode-locked laser
  • optical pulse generation

Cite this

Akbar, Jehan ; Hou, Lianping ; Haji, Mohsin ; Strain, Michael ; Marsh, J.H. ; Bryce, A.C. ; Kelly, A.E. / High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier. In: IEEE Photonics Technology Letters. 2013 ; Vol. 25, No. 3. pp. 253 - 256.
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High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier. / Akbar, Jehan; Hou, Lianping; Haji, Mohsin; Strain, Michael; Marsh, J.H.; Bryce, A.C.; Kelly, A.E.

In: IEEE Photonics Technology Letters, Vol. 25, No. 3, 01.02.2013, p. 253 - 256.

Research output: Contribution to journalArticle

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