TY - JOUR
T1 - High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier
AU - Akbar, Jehan
AU - Hou, Lianping
AU - Haji, Mohsin
AU - Strain, Michael
AU - Marsh, J.H.
AU - Bryce, A.C.
AU - Kelly, A.E.
PY - 2013/2/1
Y1 - 2013/2/1
N2 - We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.
AB - We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.
KW - III-V semiconductors
KW - aluminium compounds
KW - distributed Bragg reflector lasers
KW - mode-locked laser
KW - optical pulse generation
UR - http://www.scopus.com/inward/record.url?scp=84872866781&partnerID=8YFLogxK
U2 - 10.1109/LPT.2012.2231858
DO - 10.1109/LPT.2012.2231858
M3 - Article
SN - 1041-1135
VL - 25
SP - 253
EP - 256
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 3
ER -