We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.
- III-V semiconductors
- aluminium compounds
- distributed Bragg reflector lasers
- mode-locked laser
- optical pulse generation
Akbar, J., Hou, L., Haji, M., Strain, M., Marsh, J. H., Bryce, A. C., & Kelly, A. E. (2013). High-power AlGaInAs mode-locked DBR laser with integrated tapered optical amplifier. IEEE Photonics Technology Letters, 25(3), 253 - 256. https://doi.org/10.1109/LPT.2012.2231858