High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifierss

Jehan Akbar; Lianping Hou; Mohsin Haji; Michael J Strain; John H Marsh; A Catrina Bryce; Anthony E Kelly

doi:10.1364/OL.37.000344

High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifierss

Jehan Akbar, Lianping Hou, Mohsin Haji, Michael J Strain, John H Marsh, A Catrina Bryce, Anthony E Kelly

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W.

Original language	English
Pages (from-to)	344-346
Number of pages	3
Journal	Optics Letters
Volume	37
Issue number	3
DOIs	https://doi.org/10.1364/OL.37.000344
Publication status	Published - 1 Feb 2012

Keywords

distributed Bragg reflector lasers
semiconductor optical amplifiers
Gaussian pulses

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10.1364/OL.37.000344

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abstract = "High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W.",

keywords = "distributed Bragg reflector lasers, semiconductor optical amplifiers, Gaussian pulses",

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T1 - High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifierss

AU - Akbar, Jehan

AU - Hou, Lianping

AU - Haji, Mohsin

AU - Strain, Michael J

AU - Marsh, John H

AU - Catrina Bryce, A

AU - Kelly, Anthony E

PY - 2012/2/1

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N2 - High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W.

AB - High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W.

KW - distributed Bragg reflector lasers

KW - semiconductor optical amplifiers

KW - Gaussian pulses

U2 - 10.1364/OL.37.000344

DO - 10.1364/OL.37.000344

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EP - 346

JO - Optics Letters

JF - Optics Letters

IS - 3

ER -

High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifierss

Abstract

Keywords

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