High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifierss

Jehan Akbar, Lianping Hou, Mohsin Haji, Michael J Strain, John H Marsh, A Catrina Bryce, Anthony E Kelly

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High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1  W.
Original languageEnglish
Pages (from-to)344-346
Number of pages3
JournalOptics Letters
Issue number3
Publication statusPublished - 1 Feb 2012


  • distributed Bragg reflector lasers
  • semiconductor optical amplifiers
  • Gaussian pulses

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