High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifierss

Jehan Akbar, Lianping Hou, Mohsin Haji, Michael J Strain, John H Marsh, A Catrina Bryce, Anthony E Kelly

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1  W.
Original languageEnglish
Pages (from-to)344-346
Number of pages3
JournalOptics Letters
Volume37
Issue number3
DOIs
Publication statusPublished - 1 Feb 2012

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DBR lasers
output
light amplifiers
pulse duration
traps
quantum wells
pulses

Keywords

  • distributed Bragg reflector lasers
  • semiconductor optical amplifiers
  • Gaussian pulses

Cite this

Akbar, Jehan ; Hou, Lianping ; Haji, Mohsin ; Strain, Michael J ; Marsh, John H ; Catrina Bryce, A ; Kelly, Anthony E. / High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifierss. In: Optics Letters. 2012 ; Vol. 37, No. 3. pp. 344-346.
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High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifierss. / Akbar, Jehan; Hou, Lianping; Haji, Mohsin; Strain, Michael J; Marsh, John H; Catrina Bryce, A; Kelly, Anthony E.

In: Optics Letters, Vol. 37, No. 3, 01.02.2012, p. 344-346.

Research output: Contribution to journalArticle

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AU - Marsh, John H

AU - Catrina Bryce, A

AU - Kelly, Anthony E

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KW - distributed Bragg reflector lasers

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