High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)

J.M. Hopkins, N. Hempler, A.J. MacLean, A. Kemp, M.D. Dawson, E. Riis, N. Schulz, M. Rattunde, A.C.S. Manzor, K. Kohler, J. Wagner, D. Burns

Research output: Contribution to conferencePaper

Abstract

In recent years, semiconductor lasers based on the III-V compound semiconductor material system (AlGaIn)(AsSb), emitting in the 1.8 μm to 3.0 μm wavelength regime (in the following abbreviated as 2.Xμm) have reached a considerable level of maturity regarding spectral coverage, output power and device reliability. For the majority of the potential applications of these GaSb-based lasers, output power is not the only criterion, but the combination of high output power and good beam quality, i.e. high brightness, is the ultimate goal.
Original languageEnglish
Publication statusPublished - 2007
Event8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices - Bad Ischl, Austria
Duration: 14 May 200716 May 2007

Conference

Conference8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices
CityBad Ischl, Austria
Period14/05/0716/05/07

Keywords

  • lasers
  • semiconductor lasers
  • optics
  • optical pumping
  • optoelectronics

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