High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)

J.M. Hopkins; N. Hempler; A.J. MacLean; A. Kemp; M.D. Dawson; E. Riis; N. Schulz; M. Rattunde; A.C.S. Manzor; K. Kohler; J. Wagner; D. Burns

High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)

J.M. Hopkins, N. Hempler, A.J. MacLean, A. Kemp, M.D. Dawson, E. Riis, N. Schulz, M. Rattunde, A.C.S. Manzor, K. Kohler, J. Wagner, D. Burns

Research output: Contribution to conference › Paper › peer-review

Abstract

In recent years, semiconductor lasers based on the III-V compound semiconductor material system (AlGaIn)(AsSb), emitting in the 1.8 μm to 3.0 μm wavelength regime (in the following abbreviated as 2.Xμm) have reached a considerable level of maturity regarding spectral coverage, output power and device reliability. For the majority of the potential applications of these GaSb-based lasers, output power is not the only criterion, but the combination of high output power and good beam quality, i.e. high brightness, is the ultimate goal.

Original language	English
Publication status	Published - 2007
Event	8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices - Bad Ischl, Austria Duration: 14 May 2007 → 16 May 2007

Conference

Conference	8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices
City	Bad Ischl, Austria
Period	14/05/07 → 16/05/07

Keywords

lasers
semiconductor lasers
optics
optical pumping
optoelectronics

Cite this

Hopkins, J. M., Hempler, N., MacLean, A. J., Kemp, A., Dawson, M. D., Riis, E., Schulz, N., Rattunde, M., Manzor, A. C. S., Kohler, K., Wagner, J., & Burns, D. (2007). High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited). Paper presented at 8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, Bad Ischl, Austria.

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title = "High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)",

abstract = "In recent years, semiconductor lasers based on the III-V compound semiconductor material system (AlGaIn)(AsSb), emitting in the 1.8 μm to 3.0 μm wavelength regime (in the following abbreviated as 2.Xμm) have reached a considerable level of maturity regarding spectral coverage, output power and device reliability. For the majority of the potential applications of these GaSb-based lasers, output power is not the only criterion, but the combination of high output power and good beam quality, i.e. high brightness, is the ultimate goal.",

keywords = "lasers, semiconductor lasers, optics, optical pumping, optoelectronics",

author = "J.M. Hopkins and N. Hempler and A.J. MacLean and A. Kemp and M.D. Dawson and E. Riis and N. Schulz and M. Rattunde and A.C.S. Manzor and K. Kohler and J. Wagner and D. Burns",

year = "2007",

language = "English",

note = "8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices ; Conference date: 14-05-2007 Through 16-05-2007",

}

Hopkins, JM, Hempler, N, MacLean, AJ, Kemp, A , Dawson, MD, Riis, E, Schulz, N, Rattunde, M, Manzor, ACS, Kohler, K, Wagner, J & Burns, D 2007, 'High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)', Paper presented at 8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, Bad Ischl, Austria, 14/05/07 - 16/05/07.

TY - CONF

T1 - High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)

AU - Hopkins, J.M.

AU - Hempler, N.

AU - MacLean, A.J.

AU - Kemp, A.

AU - Dawson, M.D.

AU - Riis, E.

AU - Schulz, N.

AU - Rattunde, M.

AU - Manzor, A.C.S.

AU - Kohler, K.

AU - Wagner, J.

AU - Burns, D.

PY - 2007

Y1 - 2007

N2 - In recent years, semiconductor lasers based on the III-V compound semiconductor material system (AlGaIn)(AsSb), emitting in the 1.8 μm to 3.0 μm wavelength regime (in the following abbreviated as 2.Xμm) have reached a considerable level of maturity regarding spectral coverage, output power and device reliability. For the majority of the potential applications of these GaSb-based lasers, output power is not the only criterion, but the combination of high output power and good beam quality, i.e. high brightness, is the ultimate goal.

AB - In recent years, semiconductor lasers based on the III-V compound semiconductor material system (AlGaIn)(AsSb), emitting in the 1.8 μm to 3.0 μm wavelength regime (in the following abbreviated as 2.Xμm) have reached a considerable level of maturity regarding spectral coverage, output power and device reliability. For the majority of the potential applications of these GaSb-based lasers, output power is not the only criterion, but the combination of high output power and good beam quality, i.e. high brightness, is the ultimate goal.

KW - lasers

KW - semiconductor lasers

KW - optics

KW - optical pumping

KW - optoelectronics

UR - http://www.hlphys.jku.at/miomd8/

M3 - Paper

T2 - 8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices

Y2 - 14 May 2007 through 16 May 2007

ER -

High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)

Abstract

Conference

Keywords

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