Abstract
In recent years, semiconductor lasers based on the III-V compound semiconductor material system (AlGaIn)(AsSb), emitting in the 1.8 μm to 3.0 μm wavelength regime (in the following abbreviated as 2.Xμm) have reached a considerable level of maturity regarding spectral coverage, output power and device reliability. For the majority of the potential applications of these GaSb-based lasers, output power is not the only criterion, but the combination of high output power and good beam quality, i.e. high brightness, is the ultimate goal.
Original language | English |
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Publication status | Published - 2007 |
Event | 8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices - Bad Ischl, Austria Duration: 14 May 2007 → 16 May 2007 |
Conference
Conference | 8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices |
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City | Bad Ischl, Austria |
Period | 14/05/07 → 16/05/07 |
Keywords
- lasers
- semiconductor lasers
- optics
- optical pumping
- optoelectronics