High extraction efficiency ingan micro-ring light emitting diodes

H.W. Choi; M.D. Dawson; P.R. Edwards; R.W. Martin

doi:10.1063/1.1630352

High extraction efficiency ingan micro-ring light emitting diodes

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Abstract

Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.

Original language	English
Pages (from-to)	4483-4485
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1630352
Publication status	Published - 1 Dec 2003

Keywords

light-emitting diodes
LEDs
GaN/InGaN micro-ring elements
nanoscience

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10.1063/1.1630352

Choi-etal-api2003-high-extraction-efficiency-ingan-micro-ring-ledAccepted author manuscript, 418 KB

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title = "High extraction efficiency ingan micro-ring light emitting diodes",

abstract = "Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.",

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author = "H.W. Choi and M.D. Dawson and P.R. Edwards and R.W. Martin",

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T1 - High extraction efficiency ingan micro-ring light emitting diodes

AU - Choi, H.W.

AU - Dawson, M.D.

AU - Edwards, P.R.

AU - Martin, R.W.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.

AB - Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.

KW - light-emitting diodes

KW - LEDs

KW - GaN/InGaN micro-ring elements

KW - nanoscience

U2 - 10.1063/1.1630352

DO - 10.1063/1.1630352

M3 - Article

SN - 0003-6951

VL - 83

SP - 4483

EP - 4485

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

High extraction efficiency ingan micro-ring light emitting diodes

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Keywords

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