High extraction efficiency ingan micro-ring light emitting diodes

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Abstract

Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.
Original languageEnglish
Pages (from-to)4483-4485
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number22
DOIs
Publication statusPublished - 1 Dec 2003

Keywords

  • light-emitting diodes
  • LEDs
  • GaN/InGaN micro-ring elements
  • nanoscience

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