High extraction efficiency InGaN micro-ring light emitting diodes

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.
LanguageEnglish
Pages4483-4485
Number of pages2
JournalApplied Physics Letters
Volume83
Issue number22
DOIs
Publication statusPublished - 11 Mar 2004

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light emitting diodes
rings
light emission
electron beams
output
photons
scattering
excitation

Keywords

  • light-emitting diodes
  • LEDs
  • GaN/InGaN micro-ring elements
  • nanoscience

Cite this

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title = "High extraction efficiency InGaN micro-ring light emitting diodes",
abstract = "Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.",
keywords = "light-emitting diodes, LEDs, GaN/InGaN micro-ring elements, nanoscience",
author = "H.W. Choi and M.D. Dawson and P.R. Edwards and R.W. Martin",
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doi = "10.1063/1.1630352",
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High extraction efficiency InGaN micro-ring light emitting diodes. / Choi, H.W.; Dawson, M.D.; Edwards, P.R.; Martin, R.W.

In: Applied Physics Letters, Vol. 83, No. 22, 11.03.2004, p. 4483-4485.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High extraction efficiency InGaN micro-ring light emitting diodes

AU - Choi, H.W.

AU - Dawson, M.D.

AU - Edwards, P.R.

AU - Martin, R.W.

PY - 2004/3/11

Y1 - 2004/3/11

N2 - Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.

AB - Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.

KW - light-emitting diodes

KW - LEDs

KW - GaN/InGaN micro-ring elements

KW - nanoscience

UR - http://dx.doi.org/10.1063/1.1630352

U2 - 10.1063/1.1630352

DO - 10.1063/1.1630352

M3 - Article

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JO - Applied Physics Letters

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