High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes

C.W. Jeon, H.W. Choi, E. Gu, M.D. Dawson

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.
LanguageEnglish
Pages2421-2423
Number of pages2
JournalIEEE Photonics Technology Letters
Volume16
Issue number11
DOIs
Publication statusPublished - 18 Oct 2004

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Microarrays
Light emitting diodes
light emitting diodes
Fabrication
ultraviolet radiation
Light sources
Masks
fabrication
Wavelength
format
light sources
masks
output
matrices
wavelengths
Ultraviolet Rays

Keywords

  • AlInGaN-based light-emitting diodes
  • high-density light-emitting diodes
  • i-line UV light source
  • light-emitting diode fabrication
  • mask-free exposure
  • matrix driver circuit
  • matrix-addressable light-emitting diodes
  • matrix-addressed format
  • microarray light-emitting diodes
  • photolithographic exposure
  • ultraviolet light-emitting diodes

Cite this

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title = "High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes",
abstract = "We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.",
keywords = "AlInGaN-based light-emitting diodes, high-density light-emitting diodes, i-line UV light source, light-emitting diode fabrication, mask-free exposure, matrix driver circuit, matrix-addressable light-emitting diodes, matrix-addressed format, microarray light-emitting diodes, photolithographic exposure, ultraviolet light-emitting diodes",
author = "C.W. Jeon and H.W. Choi and E. Gu and M.D. Dawson",
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High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes. / Jeon, C.W.; Choi, H.W.; Gu, E.; Dawson, M.D.

In: IEEE Photonics Technology Letters, Vol. 16, No. 11, 18.10.2004, p. 2421-2423.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes

AU - Jeon, C.W.

AU - Choi, H.W.

AU - Gu, E.

AU - Dawson, M.D.

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Y1 - 2004/10/18

N2 - We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.

AB - We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.

KW - AlInGaN-based light-emitting diodes

KW - high-density light-emitting diodes

KW - i-line UV light source

KW - light-emitting diode fabrication

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KW - matrix driver circuit

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KW - microarray light-emitting diodes

KW - photolithographic exposure

KW - ultraviolet light-emitting diodes

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