High density matrix-addressable AllnGaN-based 368-nm microarray light-emitting diodes

C.W. Jeon, H.W. Choi, E. Gu, M.D. Dawson

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 /spl times/ 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 /spl mu/W per 20-/spl mu/m-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.
Original languageEnglish
Pages (from-to)2421-2423
Number of pages2
JournalIEEE Photonics Technology Letters
Volume16
Issue number11
DOIs
Publication statusPublished - 18 Oct 2004

Keywords

  • AlInGaN-based light-emitting diodes
  • high-density light-emitting diodes
  • i-line UV light source
  • light-emitting diode fabrication
  • mask-free exposure
  • matrix driver circuit
  • matrix-addressable light-emitting diodes
  • matrix-addressed format
  • microarray light-emitting diodes
  • photolithographic exposure
  • ultraviolet light-emitting diodes

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