High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

R. Kuszelewicz, J.-M. Benoit, S. Barbay, A. Lemaitre, G. Patriarche, K. Meunier, Alessio Tierno, Thorsten Ackemann

Research output: Contribution to journalArticle

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Abstract

Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy, temperature- and time resolvedphotoluminescence. The control of the recombination lifetime (50 ps – 1.25 ns), and of the dot density (5.10−8 – 2.1011 cm−3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non linear dispersive materials as well as fast saturable absorbers.
Original languageEnglish
Article number043107
JournalJournal of Applied Physics
Volume111
DOIs
Publication statusPublished - 2012

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nonlinear optics
optoelectronic devices
absorbers
molecular beam epitaxy
quantum dots
optical properties
life (durability)
transmission electron microscopy
temperature

Keywords

  • opto-electronic devices
  • nonlinear optics

Cite this

Kuszelewicz, R., Benoit, J-M., Barbay, S., Lemaitre, A., Patriarche, G., Meunier, K., ... Ackemann, T. (2012). High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities. Journal of Applied Physics, 111, [043107]. https://doi.org/10.1063/1.3682466
Kuszelewicz, R. ; Benoit, J.-M. ; Barbay, S. ; Lemaitre, A. ; Patriarche, G. ; Meunier, K. ; Tierno, Alessio ; Ackemann, Thorsten. / High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities. In: Journal of Applied Physics. 2012 ; Vol. 111.
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Kuszelewicz, R, Benoit, J-M, Barbay, S, Lemaitre, A, Patriarche, G, Meunier, K, Tierno, A & Ackemann, T 2012, 'High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities', Journal of Applied Physics, vol. 111, 043107. https://doi.org/10.1063/1.3682466

High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities. / Kuszelewicz, R.; Benoit, J.-M.; Barbay, S.; Lemaitre, A.; Patriarche, G.; Meunier, K.; Tierno, Alessio; Ackemann, Thorsten.

In: Journal of Applied Physics, Vol. 111, 043107, 2012.

Research output: Contribution to journalArticle

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T1 - High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

AU - Kuszelewicz, R.

AU - Benoit, J.-M.

AU - Barbay, S.

AU - Lemaitre, A.

AU - Patriarche, G.

AU - Meunier, K.

AU - Tierno, Alessio

AU - Ackemann, Thorsten

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AB - Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy, temperature- and time resolvedphotoluminescence. The control of the recombination lifetime (50 ps – 1.25 ns), and of the dot density (5.10−8 – 2.1011 cm−3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non linear dispersive materials as well as fast saturable absorbers.

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Kuszelewicz R, Benoit J-M, Barbay S, Lemaitre A, Patriarche G, Meunier K et al. High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities. Journal of Applied Physics. 2012;111. 043107. https://doi.org/10.1063/1.3682466