High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

R. Kuszelewicz, J.-M. Benoit, S. Barbay, A. Lemaitre, G. Patriarche, K. Meunier, Alessio Tierno, Thorsten Ackemann

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Abstract

Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy, temperature- and time resolvedphotoluminescence. The control of the recombination lifetime (50 ps – 1.25 ns), and of the dot density (5.10−8 – 2.1011 cm−3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non linear dispersive materials as well as fast saturable absorbers.
Original languageEnglish
Article number043107
JournalJournal of Applied Physics
Volume111
DOIs
Publication statusPublished - 2012

Keywords

  • opto-electronic devices
  • nonlinear optics

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