Projects per year
Abstract
Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy, temperature- and time resolvedphotoluminescence. The control of the recombination lifetime (50 ps – 1.25 ns), and of the dot density (5.10−8 – 2.1011 cm−3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non linear dispersive materials as well as fast saturable absorbers.
Original language | English |
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Article number | 043107 |
Journal | Journal of Applied Physics |
Volume | 111 |
DOIs | |
Publication status | Published - 2012 |
Keywords
- opto-electronic devices
- nonlinear optics
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Dive into the research topics of 'High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities'. Together they form a unique fingerprint.Projects
- 1 Finished
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NONLINEAR OPTICS AND LIGHT LOCALIZATION IN QUANTUM DOT
EPSRC (Engineering and Physical Sciences Research Council)
1/01/07 → 30/06/10
Project: Research