Hexagonal ZnCdS epilayers and CdSSe/ZnCdS QW structures on CdS(0001) and ZnCdS(0001) substrates grown by MOVPE

P. I. Kuznetsov, V. A. Jitov, G. G. Yakushcheva, B. S. Shchamkhalova, L. Yu Zakharov, V. I. Kozlovsky, Ya K. Skasyrsky, K. P. O'Donnell, C. Trager-Cowan

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

Optimization of growth conditions allows us to grow mirror-like hexagonal ZnCdS layers and CdSSe/ZnCdS quantum well (QW) structures on CdS(0001) and ZnCdS(0001) substrates by MOVPE. ZnCdS epilayers with high cathodoluminescence (CL) intensity at room temperature (RT) have also been obtained. An intense QW emission line has been observed in CdS/ZnCdS QW structures. With increasing excitation intensity the line shifted to shorter wavelength, which is a manifestation of an internal piezoelectric effect. An additional short-wavelength line appears in low-temperature CL spectra of CdSSe/ZnCdS QW structures due to localization of charge carriers by nonuniformity of alloy composition or QW thickness.

Original languageEnglish
Pages (from-to)516-517
Number of pages2
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume17
Issue number1-4
DOIs
Publication statusPublished - 1 Apr 2003
EventProceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France
Duration: 22 Jul 200226 Jul 2002

Keywords

  • CdSSe/ZnCdS QW
  • CdZnS substrates
  • MOVPE
  • cathodoluminescence

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