Hexagonal ZnCdS epilayers and CdSSe/ZnCdS QW structures on CdS(0001) and ZnCdS(0001) substrates grown by MOVPE

P. I. Kuznetsov, V. A. Jitov, G. G. Yakushcheva, B. S. Shchamkhalova, L. Yu Zakharov, V. I. Kozlovsky, Ya K. Skasyrsky, K. P. O'Donnell, C. Trager-Cowan

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Optimization of growth conditions allows us to grow mirror-like hexagonal ZnCdS layers and CdSSe/ZnCdS quantum well (QW) structures on CdS(0001) and ZnCdS(0001) substrates by MOVPE. ZnCdS epilayers with high cathodoluminescence (CL) intensity at room temperature (RT) have also been obtained. An intense QW emission line has been observed in CdS/ZnCdS QW structures. With increasing excitation intensity the line shifted to shorter wavelength, which is a manifestation of an internal piezoelectric effect. An additional short-wavelength line appears in low-temperature CL spectra of CdSSe/ZnCdS QW structures due to localization of charge carriers by nonuniformity of alloy composition or QW thickness.

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Metallorganic vapor phase epitaxy
Epilayers
Semiconductor quantum wells
quantum wells
Substrates
Cathodoluminescence
cathodoluminescence
Wavelength
Piezoelectricity
Charge carriers
wavelengths
nonuniformity
charge carriers
Mirrors
mirrors
Temperature
optimization
room temperature
Chemical analysis
excitation

Keywords

  • CdSSe/ZnCdS QW
  • CdZnS substrates
  • MOVPE
  • cathodoluminescence

Cite this

Kuznetsov, P. I. ; Jitov, V. A. ; Yakushcheva, G. G. ; Shchamkhalova, B. S. ; Zakharov, L. Yu ; Kozlovsky, V. I. ; Skasyrsky, Ya K. ; O'Donnell, K. P. ; Trager-Cowan, C. / Hexagonal ZnCdS epilayers and CdSSe/ZnCdS QW structures on CdS(0001) and ZnCdS(0001) substrates grown by MOVPE. In: Physica E: Low-dimensional Systems and Nanostructures. 2003 ; Vol. 17, No. 1-4. pp. 516-517.
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abstract = "Optimization of growth conditions allows us to grow mirror-like hexagonal ZnCdS layers and CdSSe/ZnCdS quantum well (QW) structures on CdS(0001) and ZnCdS(0001) substrates by MOVPE. ZnCdS epilayers with high cathodoluminescence (CL) intensity at room temperature (RT) have also been obtained. An intense QW emission line has been observed in CdS/ZnCdS QW structures. With increasing excitation intensity the line shifted to shorter wavelength, which is a manifestation of an internal piezoelectric effect. An additional short-wavelength line appears in low-temperature CL spectra of CdSSe/ZnCdS QW structures due to localization of charge carriers by nonuniformity of alloy composition or QW thickness.",
keywords = "CdSSe/ZnCdS QW, CdZnS substrates, MOVPE, cathodoluminescence",
author = "Kuznetsov, {P. I.} and Jitov, {V. A.} and Yakushcheva, {G. G.} and Shchamkhalova, {B. S.} and Zakharov, {L. Yu} and Kozlovsky, {V. I.} and Skasyrsky, {Ya K.} and O'Donnell, {K. P.} and C. Trager-Cowan",
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Hexagonal ZnCdS epilayers and CdSSe/ZnCdS QW structures on CdS(0001) and ZnCdS(0001) substrates grown by MOVPE. / Kuznetsov, P. I.; Jitov, V. A.; Yakushcheva, G. G.; Shchamkhalova, B. S.; Zakharov, L. Yu; Kozlovsky, V. I.; Skasyrsky, Ya K.; O'Donnell, K. P.; Trager-Cowan, C.

In: Physica E: Low-dimensional Systems and Nanostructures, Vol. 17, No. 1-4, 01.04.2003, p. 516-517.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Hexagonal ZnCdS epilayers and CdSSe/ZnCdS QW structures on CdS(0001) and ZnCdS(0001) substrates grown by MOVPE

AU - Kuznetsov, P. I.

AU - Jitov, V. A.

AU - Yakushcheva, G. G.

AU - Shchamkhalova, B. S.

AU - Zakharov, L. Yu

AU - Kozlovsky, V. I.

AU - Skasyrsky, Ya K.

AU - O'Donnell, K. P.

AU - Trager-Cowan, C.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - Optimization of growth conditions allows us to grow mirror-like hexagonal ZnCdS layers and CdSSe/ZnCdS quantum well (QW) structures on CdS(0001) and ZnCdS(0001) substrates by MOVPE. ZnCdS epilayers with high cathodoluminescence (CL) intensity at room temperature (RT) have also been obtained. An intense QW emission line has been observed in CdS/ZnCdS QW structures. With increasing excitation intensity the line shifted to shorter wavelength, which is a manifestation of an internal piezoelectric effect. An additional short-wavelength line appears in low-temperature CL spectra of CdSSe/ZnCdS QW structures due to localization of charge carriers by nonuniformity of alloy composition or QW thickness.

AB - Optimization of growth conditions allows us to grow mirror-like hexagonal ZnCdS layers and CdSSe/ZnCdS quantum well (QW) structures on CdS(0001) and ZnCdS(0001) substrates by MOVPE. ZnCdS epilayers with high cathodoluminescence (CL) intensity at room temperature (RT) have also been obtained. An intense QW emission line has been observed in CdS/ZnCdS QW structures. With increasing excitation intensity the line shifted to shorter wavelength, which is a manifestation of an internal piezoelectric effect. An additional short-wavelength line appears in low-temperature CL spectra of CdSSe/ZnCdS QW structures due to localization of charge carriers by nonuniformity of alloy composition or QW thickness.

KW - CdSSe/ZnCdS QW

KW - CdZnS substrates

KW - MOVPE

KW - cathodoluminescence

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U2 - 10.1016/S1386-9477(02)00856-1

DO - 10.1016/S1386-9477(02)00856-1

M3 - Conference article

VL - 17

SP - 516

EP - 517

JO - Physica E: Low-dimensional Systems and Nanostructures

T2 - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-4

ER -