Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

S.V. Novikov, C.R. Staddon, C.T. Foxon, K.M. Yu, R. Broesler, M. Hawkridge, Z. Liliental-Weber, J. Denlinger, I. Demchenko, Franziska Luckert, Paul Edwards, Robert Martin, W. Walukiewicz