Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

S.V. Novikov, C.R. Staddon, C.T. Foxon, K.M. Yu, R. Broesler, M. Hawkridge, Z. Liliental-Weber, J. Denlinger, I. Demchenko, Franziska Luckert, Paul Edwards, Robert Martin, W. Walukiewicz

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8 Citations (Scopus)

Abstract

Using low temperature MBE, we have shown that it is possible to grow amorphous GaN1-xAsx layers with a variable As content (0 < x < 0.8) on both crystalline (sapphire and silicon) and amorphous (glass and Pyrex glass) substrates. Despite the fact that the samples with high As content are amorphous, we observe a gradual continuous decrease of bandgap from similar to 3.4 to similar to 0.8 eV with increase in As content. To the best of our knowledge this is the first demonstration of homogeneous amorphous GaN-based alloys over a wide composition range. The large band gap range of the amorphous phase of GaNAs covers much of the solar spectrum. The amorphous nature of the GaNAs alloys is particularly advantageous since low cost substrates such as glass and Pyrex glass can be used for solar cell fabrication.

Original languageEnglish
Pages (from-to)60-63
Number of pages4
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
Publication statusPublished - 15 May 2011

Keywords

  • crystals
  • molecular beam epitaxy
  • amorphous
  • crystalline
  • GaNAs alloys
  • solar energy conversion devices
  • band gaps

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    Novikov, S. V., Staddon, C. R., Foxon, C. T., Yu, K. M., Broesler, R., Hawkridge, M., Liliental-Weber, Z., Denlinger, J., Demchenko, I., Luckert, F., Edwards, P., Martin, R., & Walukiewicz, W. (2011). Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices. Journal of Crystal Growth, 323(1), 60-63. https://doi.org/10.1016/j.jcrysgro.2010.11.064