Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates

J. F. H. Nicholls, B. Henderson, C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell, T. S. Cheng, C. T. Foxon, B. H T Chai

Research output: Contribution to journalConference article

27 Citations (Scopus)

Abstract

In this paper we demonstrate the feasibility of growing III-N semiconductors on novel lattice-matched oxide substrates. Although the growth parameters are not yet optimal, acceptable GaN layers have been grown.

LanguageEnglish
Pages535-539
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume395
Publication statusPublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995

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Molecular beam epitaxy
Crystal lattices
Oxides
Optical properties
Semiconductor materials
optical properties
oxides
Substrates

Cite this

Nicholls, J. F. H. ; Henderson, B. ; Trager-Cowan, C. ; Middleton, P. G. ; O'Donnell, K. P. ; Cheng, T. S. ; Foxon, C. T. ; Chai, B. H T. / Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 395. pp. 535-539.
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Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates. / Nicholls, J. F. H.; Henderson, B.; Trager-Cowan, C.; Middleton, P. G.; O'Donnell, K. P.; Cheng, T. S.; Foxon, C. T.; Chai, B. H T.

In: Materials Research Society Symposium - Proceedings, Vol. 395, 01.01.1996, p. 535-539.

Research output: Contribution to journalConference article

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AU - Henderson, B.

AU - Trager-Cowan, C.

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