Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates

J. F. H. Nicholls, B. Henderson, C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell, T. S. Cheng, C. T. Foxon, B. H T Chai

Research output: Contribution to journalConference article

27 Citations (Scopus)

Abstract

In this paper we demonstrate the feasibility of growing III-N semiconductors on novel lattice-matched oxide substrates. Although the growth parameters are not yet optimal, acceptable GaN layers have been grown.

Original languageEnglish
Pages (from-to)535-539
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume395
Publication statusPublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995

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