Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates

J. F. H. Nicholls; B. Henderson; C. Trager-Cowan; P. G. Middleton; K. P. O'Donnell; T. S. Cheng; C. T. Foxon; B. H T Chai

Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates

J. F. H. Nicholls, B. Henderson, C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell, T. S. Cheng, C. T. Foxon, B. H T Chai

Research output: Contribution to journal › Conference article › peer-review

29 Citations (Scopus)

Abstract

In this paper we demonstrate the feasibility of growing III-N semiconductors on novel lattice-matched oxide substrates. Although the growth parameters are not yet optimal, acceptable GaN layers have been grown.

Original language	English
Pages (from-to)	535-539
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	395
Publication status	Published - 1 Jan 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 26 Nov 1995 → 1 Dec 1995

Cite this

@article{5d23861f4760481db70038fbb39e37bc,

title = "Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates",

abstract = "In this paper we demonstrate the feasibility of growing III-N semiconductors on novel lattice-matched oxide substrates. Although the growth parameters are not yet optimal, acceptable GaN layers have been grown.",

author = "Nicholls, {J. F. H.} and B. Henderson and C. Trager-Cowan and Middleton, {P. G.} and O'Donnell, {K. P.} and Cheng, {T. S.} and Foxon, {C. T.} and Chai, {B. H T}",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "395",

pages = "535--539",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

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TY - JOUR

T1 - Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates

AU - Nicholls, J. F. H.

AU - Henderson, B.

AU - Trager-Cowan, C.

AU - Middleton, P. G.

AU - O'Donnell, K. P.

AU - Cheng, T. S.

AU - Foxon, C. T.

AU - Chai, B. H T

PY - 1996/1/1

Y1 - 1996/1/1

N2 - In this paper we demonstrate the feasibility of growing III-N semiconductors on novel lattice-matched oxide substrates. Although the growth parameters are not yet optimal, acceptable GaN layers have been grown.

AB - In this paper we demonstrate the feasibility of growing III-N semiconductors on novel lattice-matched oxide substrates. Although the growth parameters are not yet optimal, acceptable GaN layers have been grown.

UR - http://www.scopus.com/inward/record.url?scp=0029745817&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029745817

SN - 0272-9172

VL - 395

SP - 535

EP - 539

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates

Abstract

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