Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer

K. Bejtka, R.W. Martin, I.M. Watson, S. Ndiaye, M. Leroux

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effects of lattice-matched (Al,In)N insertion layers on the optical and structural properties of GaN films grown epitaxially on freestanding GaN substrates are described. The intensities and energetic positions of the GaN excitonic transitions in the photoluminescence from material grown above (Al,In)N show that high material quality and low strain have been preserved. The free exciton energies of the overgrown GaN, measured by reflectivity and photoluminescence, are 3.477, 3.482, and 3.500 eV for A, B, and C excitons, respectively, corresponding to strain-free GaN. The spectra are compared with those of a similar heterostructure grown on sapphire and of GaN-on-sapphire templates.
LanguageEnglish
Pages191912-1
Number of pages191911
JournalApplied Physics Letters
Volume89
Issue number191912
DOIs
Publication statusPublished - 9 Nov 2006

Fingerprint

insertion
sapphire
excitons
photoluminescence
templates
reflectance
optical properties
energy

Keywords

  • growth characterisation
  • optical characterisation
  • structural characterization
  • GaN
  • GaN substrates
  • photonics
  • nanoscience

Cite this

@article{65a7ecba8d754ad08a9bb2361a9c48d9,
title = "Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer",
abstract = "The effects of lattice-matched (Al,In)N insertion layers on the optical and structural properties of GaN films grown epitaxially on freestanding GaN substrates are described. The intensities and energetic positions of the GaN excitonic transitions in the photoluminescence from material grown above (Al,In)N show that high material quality and low strain have been preserved. The free exciton energies of the overgrown GaN, measured by reflectivity and photoluminescence, are 3.477, 3.482, and 3.500 eV for A, B, and C excitons, respectively, corresponding to strain-free GaN. The spectra are compared with those of a similar heterostructure grown on sapphire and of GaN-on-sapphire templates.",
keywords = "growth characterisation, optical characterisation, structural characterization, GaN, GaN substrates, photonics, nanoscience",
author = "K. Bejtka and R.W. Martin and I.M. Watson and S. Ndiaye and M. Leroux",
year = "2006",
month = "11",
day = "9",
doi = "10.1063/1.2385113",
language = "English",
volume = "89",
pages = "191912--1",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "191912",

}

Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer. / Bejtka, K.; Martin, R.W.; Watson, I.M.; Ndiaye, S.; Leroux, M.

In: Applied Physics Letters, Vol. 89, No. 191912, 09.11.2006, p. 191912-1.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer

AU - Bejtka, K.

AU - Martin, R.W.

AU - Watson, I.M.

AU - Ndiaye, S.

AU - Leroux, M.

PY - 2006/11/9

Y1 - 2006/11/9

N2 - The effects of lattice-matched (Al,In)N insertion layers on the optical and structural properties of GaN films grown epitaxially on freestanding GaN substrates are described. The intensities and energetic positions of the GaN excitonic transitions in the photoluminescence from material grown above (Al,In)N show that high material quality and low strain have been preserved. The free exciton energies of the overgrown GaN, measured by reflectivity and photoluminescence, are 3.477, 3.482, and 3.500 eV for A, B, and C excitons, respectively, corresponding to strain-free GaN. The spectra are compared with those of a similar heterostructure grown on sapphire and of GaN-on-sapphire templates.

AB - The effects of lattice-matched (Al,In)N insertion layers on the optical and structural properties of GaN films grown epitaxially on freestanding GaN substrates are described. The intensities and energetic positions of the GaN excitonic transitions in the photoluminescence from material grown above (Al,In)N show that high material quality and low strain have been preserved. The free exciton energies of the overgrown GaN, measured by reflectivity and photoluminescence, are 3.477, 3.482, and 3.500 eV for A, B, and C excitons, respectively, corresponding to strain-free GaN. The spectra are compared with those of a similar heterostructure grown on sapphire and of GaN-on-sapphire templates.

KW - growth characterisation

KW - optical characterisation

KW - structural characterization

KW - GaN

KW - GaN substrates

KW - photonics

KW - nanoscience

UR - http://dx.doi.org/10.1063/1.2385113

U2 - 10.1063/1.2385113

DO - 10.1063/1.2385113

M3 - Article

VL - 89

SP - 191912

EP - 191911

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 191912

ER -