Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers

Research output: Contribution to conferenceSpeech

60 Downloads (Pure)

Abstract

This speech was presented to the 2005 Annual Conference of the British Association for Crystal Growth, held in Sheffield on Sunday 4 - Tuesday 6 September 2005. The presentation focused on the design and growth of microcavities and the roles of AlInN layer in post-growth processing.
Original languageEnglish
Number of pages11
Publication statusPublished - 2005
EventAnnual Conference of the British Association for Crystal Growth - Sheffield, United Kingdom
Duration: 4 Sep 20056 Sep 2005

Conference

ConferenceAnnual Conference of the British Association for Crystal Growth
CountryUnited Kingdom
CitySheffield
Period4/09/056/09/05

Keywords

  • growth
  • fabrication
  • gaN-based structures
  • aluminium indium nitride insertion layers
  • microcavities
  • AlInN layer
  • post-growth processing

Cite this