Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II–VI based semiconductor disk lasers

Joel De Jesus, Thor Garcia, Vladimir Kartazaev, Brynmor Jones, Peter Schlosser, Swapan Gayen, Jennifer Hastie, Maria Tamargo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the structural and optical properties of molecular beam epitaxy grown II–VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically-pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5-period ZnCdMgSe-based DBR grown on the InGaAs/InP substrate. X-ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady-state photoluminescence measurements demonstrated surface emission between 540–570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe-based DBR, a 20-period DBR was grown and a reflectivity of 83% was obtained at ∼560 nm. We estimate that a DBR with ∼40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II–VI MQW structures on InP substrates for the development of SDLs operational in the green–yellow wavelength range.
Original languageEnglish
JournalPhysica Status Solidi A
Early online date10 Sep 2014
DOIs
Publication statusPublished - 2014

Fingerprint

Methyl Green
Distributed Bragg reflectors
Videodisks
Bragg reflectors
emitters
Semiconductor materials
lasers
Spontaneous emission
Substrates
spontaneous emission
Semiconductor quantum wells
Luminescence
quantum wells
luminescence
Stimulated emission
Surface measurement
Buffer layers
stimulated emission
Molecular beam epitaxy
Structural properties

Keywords

  • lasers
  • MBE
  • photoluminescence
  • ZnCdMgSe
  • II-VI semiconductors

Cite this

De Jesus, Joel ; Garcia, Thor ; Kartazaev, Vladimir ; Jones, Brynmor ; Schlosser, Peter ; Gayen, Swapan ; Hastie, Jennifer ; Tamargo, Maria. / Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II–VI based semiconductor disk lasers. In: Physica Status Solidi A. 2014.
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title = "Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II–VI based semiconductor disk lasers",
abstract = "We report the structural and optical properties of molecular beam epitaxy grown II–VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically-pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5-period ZnCdMgSe-based DBR grown on the InGaAs/InP substrate. X-ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady-state photoluminescence measurements demonstrated surface emission between 540–570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe-based DBR, a 20-period DBR was grown and a reflectivity of 83{\%} was obtained at ∼560 nm. We estimate that a DBR with ∼40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II–VI MQW structures on InP substrates for the development of SDLs operational in the green–yellow wavelength range.",
keywords = "lasers, MBE, photoluminescence, ZnCdMgSe, II-VI semiconductors",
author = "{De Jesus}, Joel and Thor Garcia and Vladimir Kartazaev and Brynmor Jones and Peter Schlosser and Swapan Gayen and Jennifer Hastie and Maria Tamargo",
note = ". This is the accepted version of the following article: Jesus, J. D., Garcia, T. A., Kartazaev, V., Jones, B. E., Schlosser, P. J., Gayen, S. K., Hastie, J. E. and Tamargo, M. C. (2014), Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II–VI based semiconductor disk lasers. Phys. Status Solidi A. doi: 10.1002/pssa.201431439, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pssa.201431439/abstract.",
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Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II–VI based semiconductor disk lasers. / De Jesus, Joel; Garcia, Thor; Kartazaev, Vladimir; Jones, Brynmor; Schlosser, Peter; Gayen, Swapan; Hastie, Jennifer; Tamargo, Maria.

In: Physica Status Solidi A, 2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II–VI based semiconductor disk lasers

AU - De Jesus, Joel

AU - Garcia, Thor

AU - Kartazaev, Vladimir

AU - Jones, Brynmor

AU - Schlosser, Peter

AU - Gayen, Swapan

AU - Hastie, Jennifer

AU - Tamargo, Maria

N1 - . This is the accepted version of the following article: Jesus, J. D., Garcia, T. A., Kartazaev, V., Jones, B. E., Schlosser, P. J., Gayen, S. K., Hastie, J. E. and Tamargo, M. C. (2014), Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II–VI based semiconductor disk lasers. Phys. Status Solidi A. doi: 10.1002/pssa.201431439, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pssa.201431439/abstract.

PY - 2014

Y1 - 2014

N2 - We report the structural and optical properties of molecular beam epitaxy grown II–VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically-pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5-period ZnCdMgSe-based DBR grown on the InGaAs/InP substrate. X-ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady-state photoluminescence measurements demonstrated surface emission between 540–570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe-based DBR, a 20-period DBR was grown and a reflectivity of 83% was obtained at ∼560 nm. We estimate that a DBR with ∼40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II–VI MQW structures on InP substrates for the development of SDLs operational in the green–yellow wavelength range.

AB - We report the structural and optical properties of molecular beam epitaxy grown II–VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically-pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5-period ZnCdMgSe-based DBR grown on the InGaAs/InP substrate. X-ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady-state photoluminescence measurements demonstrated surface emission between 540–570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe-based DBR, a 20-period DBR was grown and a reflectivity of 83% was obtained at ∼560 nm. We estimate that a DBR with ∼40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II–VI MQW structures on InP substrates for the development of SDLs operational in the green–yellow wavelength range.

KW - lasers

KW - MBE

KW - photoluminescence

KW - ZnCdMgSe

KW - II-VI semiconductors

UR - http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319

U2 - 10.1002/pssa.201431439

DO - 10.1002/pssa.201431439

M3 - Article

JO - Physica Status Solidi A

JF - Physica Status Solidi A

SN - 1862-6300

ER -