Growth and characterization of highly mismatched GaN1-xSbx alloys

K.M. Yu, S. V. Novikov, Min Ting, W.L. Sarney, S.P. Svensson, M. Shaw, R.W. Martin, W. Walukiewicz, C.T. Foxon

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Abstract

A systematic investigation on the effects of growth temperature, Ga flux, and Sb flux on the incorporation of Sb, film structure, and optical properties of the GaN1-xSbx highly mismatched alloys (HMAs) was carried out. We found that the direct bandgap ranging from 3.4 eV to below 1.0 eV for the alloys grown at low temperature. At the growth temperature of 80 degrees C, GaN1-xSbx with x>6% losses crystallinity and becomes primarily amorphous with small crystallites of 2-5 nm. Despite the range of microstructures found for GaN1-xSbx alloys with different composition, a well-developed absorption edge shifts from 3.4 eV (GaN) to close to 2 eV for samples with a small amount, less than 10% of Sb. Luminescence from dilute GaN1-xSbx alloys grown at high temperature and the bandgap energy for alloys with higher Sb content are consistent with a localized substitutional Sb level E-Sb at similar to 1.1 eV above the valence band of GaN. The decrease in the bandgap of GaN1-xSbx HMAs is consistent with the formation of a Sb-derived band due to the anticrossing interaction of the Sb states with the valence band of GaN.
Original languageEnglish
Article number123704
Number of pages8
JournalJournal of Applied Physics
Volume116
Issue number12
Early online date24 Sep 2014
DOIs
Publication statusPublished - 28 Sep 2014

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valence
crystallites
crystallinity
luminescence
optical properties
microstructure
temperature
shift
interactions
energy

Keywords

  • GaN
  • GaSb
  • HMAs
  • film structures
  • growth temperature
  • Ga flux
  • Sb flux

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Yu, K. M., Novikov, S. V., Ting, M., Sarney, W. L., Svensson, S. P., Shaw, M., ... Foxon, C. T. (2014). Growth and characterization of highly mismatched GaN1-xSbx alloys. Journal of Applied Physics, 116(12), [123704]. https://doi.org/10.1063/1.4896364
Yu, K.M. ; Novikov, S. V. ; Ting, Min ; Sarney, W.L. ; Svensson, S.P. ; Shaw, M. ; Martin, R.W. ; Walukiewicz, W. ; Foxon, C.T. / Growth and characterization of highly mismatched GaN1-xSbx alloys. In: Journal of Applied Physics. 2014 ; Vol. 116, No. 12.
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Yu, KM, Novikov, SV, Ting, M, Sarney, WL, Svensson, SP, Shaw, M, Martin, RW, Walukiewicz, W & Foxon, CT 2014, 'Growth and characterization of highly mismatched GaN1-xSbx alloys', Journal of Applied Physics, vol. 116, no. 12, 123704. https://doi.org/10.1063/1.4896364

Growth and characterization of highly mismatched GaN1-xSbx alloys. / Yu, K.M.; Novikov, S. V.; Ting, Min; Sarney, W.L.; Svensson, S.P.; Shaw, M.; Martin, R.W.; Walukiewicz, W.; Foxon, C.T.

In: Journal of Applied Physics, Vol. 116, No. 12, 123704, 28.09.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and characterization of highly mismatched GaN1-xSbx alloys

AU - Yu, K.M.

AU - Novikov, S. V.

AU - Ting, Min

AU - Sarney, W.L.

AU - Svensson, S.P.

AU - Shaw, M.

AU - Martin, R.W.

AU - Walukiewicz, W.

AU - Foxon, C.T.

N1 - © 2015 AIP Publishing

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N2 - A systematic investigation on the effects of growth temperature, Ga flux, and Sb flux on the incorporation of Sb, film structure, and optical properties of the GaN1-xSbx highly mismatched alloys (HMAs) was carried out. We found that the direct bandgap ranging from 3.4 eV to below 1.0 eV for the alloys grown at low temperature. At the growth temperature of 80 degrees C, GaN1-xSbx with x>6% losses crystallinity and becomes primarily amorphous with small crystallites of 2-5 nm. Despite the range of microstructures found for GaN1-xSbx alloys with different composition, a well-developed absorption edge shifts from 3.4 eV (GaN) to close to 2 eV for samples with a small amount, less than 10% of Sb. Luminescence from dilute GaN1-xSbx alloys grown at high temperature and the bandgap energy for alloys with higher Sb content are consistent with a localized substitutional Sb level E-Sb at similar to 1.1 eV above the valence band of GaN. The decrease in the bandgap of GaN1-xSbx HMAs is consistent with the formation of a Sb-derived band due to the anticrossing interaction of the Sb states with the valence band of GaN.

AB - A systematic investigation on the effects of growth temperature, Ga flux, and Sb flux on the incorporation of Sb, film structure, and optical properties of the GaN1-xSbx highly mismatched alloys (HMAs) was carried out. We found that the direct bandgap ranging from 3.4 eV to below 1.0 eV for the alloys grown at low temperature. At the growth temperature of 80 degrees C, GaN1-xSbx with x>6% losses crystallinity and becomes primarily amorphous with small crystallites of 2-5 nm. Despite the range of microstructures found for GaN1-xSbx alloys with different composition, a well-developed absorption edge shifts from 3.4 eV (GaN) to close to 2 eV for samples with a small amount, less than 10% of Sb. Luminescence from dilute GaN1-xSbx alloys grown at high temperature and the bandgap energy for alloys with higher Sb content are consistent with a localized substitutional Sb level E-Sb at similar to 1.1 eV above the valence band of GaN. The decrease in the bandgap of GaN1-xSbx HMAs is consistent with the formation of a Sb-derived band due to the anticrossing interaction of the Sb states with the valence band of GaN.

KW - GaN

KW - GaSb

KW - HMAs

KW - film structures

KW - growth temperature

KW - Ga flux

KW - Sb flux

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U2 - 10.1063/1.4896364

DO - 10.1063/1.4896364

M3 - Article

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 123704

ER -

Yu KM, Novikov SV, Ting M, Sarney WL, Svensson SP, Shaw M et al. Growth and characterization of highly mismatched GaN1-xSbx alloys. Journal of Applied Physics. 2014 Sep 28;116(12). 123704. https://doi.org/10.1063/1.4896364