Growth and characterisation of Eu doped GaN thin films

G Halambalakis, N Rousseau, O Briot, S Ruffenach, R L Aulombard, P R Edwards, K P O'Donnell, T Wojtowicz, P Ruterana

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Abstract

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.

Original languageEnglish
Pages (from-to)721-728
Number of pages8
JournalSuperlattices and Microstructures
Volume36
Issue number4-6
DOIs
Publication statusPublished - 2004

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Keywords

  • photoluminescence
  • emission
  • cathodoluminescence
  • optical properties

Cite this

Halambalakis, G., Rousseau, N., Briot, O., Ruffenach, S., Aulombard, R. L., Edwards, P. R., ... Ruterana, P. (2004). Growth and characterisation of Eu doped GaN thin films. Superlattices and Microstructures, 36(4-6), 721-728. https://doi.org/10.1016/j.spmi.2004.09.028