Growth and characterisation of Eu doped GaN thin films

G Halambalakis, N Rousseau, O Briot, S Ruffenach, R L Aulombard, P R Edwards, K P O'Donnell, T Wojtowicz, P Ruterana

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.

LanguageEnglish
Pages721-728
Number of pages8
JournalSuperlattices and Microstructures
Volume36
Issue number4-6
DOIs
Publication statusPublished - 2004

Fingerprint

Cathodoluminescence
cathodoluminescence
Thin films
low concentrations
Photoluminescence
thin films
Gas source molecular beam epitaxy
photoluminescence
Full width at half maximum
Energy gap
molecular beam epitaxy
Optical properties
optical properties
X ray diffraction
Crystals
diffraction
gases
excitation
crystals
x rays

Keywords

  • photoluminescence
  • emission
  • cathodoluminescence
  • optical properties

Cite this

Halambalakis, G., Rousseau, N., Briot, O., Ruffenach, S., Aulombard, R. L., Edwards, P. R., ... Ruterana, P. (2004). Growth and characterisation of Eu doped GaN thin films. Superlattices and Microstructures, 36(4-6), 721-728. https://doi.org/10.1016/j.spmi.2004.09.028
Halambalakis, G ; Rousseau, N ; Briot, O ; Ruffenach, S ; Aulombard, R L ; Edwards, P R ; O'Donnell, K P ; Wojtowicz, T ; Ruterana, P . / Growth and characterisation of Eu doped GaN thin films. In: Superlattices and Microstructures. 2004 ; Vol. 36, No. 4-6. pp. 721-728.
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Halambalakis, G, Rousseau, N, Briot, O, Ruffenach, S, Aulombard, RL, Edwards, PR, O'Donnell, KP, Wojtowicz, T & Ruterana, P 2004, 'Growth and characterisation of Eu doped GaN thin films' Superlattices and Microstructures, vol. 36, no. 4-6, pp. 721-728. https://doi.org/10.1016/j.spmi.2004.09.028

Growth and characterisation of Eu doped GaN thin films. / Halambalakis, G ; Rousseau, N ; Briot, O ; Ruffenach, S ; Aulombard, R L ; Edwards, P R ; O'Donnell, K P ; Wojtowicz, T ; Ruterana, P .

In: Superlattices and Microstructures, Vol. 36, No. 4-6, 2004, p. 721-728.

Research output: Contribution to journalArticle

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T1 - Growth and characterisation of Eu doped GaN thin films

AU - Halambalakis, G

AU - Rousseau, N

AU - Briot, O

AU - Ruffenach, S

AU - Aulombard, R L

AU - Edwards, P R

AU - O'Donnell, K P

AU - Wojtowicz, T

AU - Ruterana, P

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AB - We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.

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KW - cathodoluminescence

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Halambalakis G, Rousseau N, Briot O, Ruffenach S, Aulombard RL, Edwards PR et al. Growth and characterisation of Eu doped GaN thin films. Superlattices and Microstructures. 2004;36(4-6):721-728. https://doi.org/10.1016/j.spmi.2004.09.028