Global search for stable screw dislocation cores in III-N semiconductors

Simon Kraeusel, Benjamin Hourahine

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The promise of the broad range of direct band gaps of the {Al,Ga,In}N system is limited by the crystal quality of current material. As grown defect densities of InN, when compared with the more mature GaN, are extremely high and InN is strongly influenced by these defects. This is particularly important due to the unusual position of the charge neutrality level of InN, leading to both the well known surface charge accumulation and difficulties in p-type doping. While impurities and native defects clearly impact on the bulk carrier density in InN, the effects of threading dislocations on the electrical properties are still in dispute. Issues such as whether the dislocation line is charged or contains dangling bonds remain open. We present the results of a global search for possible dislocation core reconstructions for a range of screw dislocations in wurtzite III-N material, utilizing empirical Stillinger-Weber inter-atomic potentials. In addition we investigate a wide range of non-stoichiometric core structures.
LanguageEnglish
Pages71-74
Number of pages4
JournalPhysica Status Solidi A
Volume209
Issue number1
Early online date16 Nov 2011
DOIs
Publication statusPublished - Jan 2012

Fingerprint

Screw dislocations
screw dislocations
Semiconductor materials
Defects
Dangling bonds
Defect density
defects
Surface charge
Dislocations (crystals)
Carrier concentration
Electric properties
Energy gap
Doping (additives)
Impurities
wurtzite
Crystals
electrical properties
impurities
crystals

Keywords

  • semiconductors
  • stable screw dislocation
  • crystal structures

Cite this

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Global search for stable screw dislocation cores in III-N semiconductors. / Kraeusel, Simon; Hourahine, Benjamin.

In: Physica Status Solidi A, Vol. 209, No. 1, 01.2012, p. 71-74.

Research output: Contribution to journalArticle

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