Gigahertz single-electron pumping mediated by parasitic states

Alessandro Rossi, Jevgeny Klochan, Janis Timoshenko, Fay E. Hudson, Mikko Möttönen, Sven Rogge, Andrew S. Dzurak, Vyacheslavs Kashcheyevs, Giuseppe C. Tettamanzi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.

LanguageEnglish
Pages4141-4147
Number of pages7
JournalNano Letters
Volume18
Issue number7
DOIs
Publication statusPublished - 19 Jun 2018

Fingerprint

electron pumping
Pumps
pumps
Semiconductor quantum dots
Electrons
quantum dots
Electric currents
Silicon
electric current
electron capture
metrology
Charge transfer
Electrostatics
emerging
electrons
charge transfer
traps
electrostatics
Semiconductor materials
silicon

Keywords

  • quantum dot
  • quantum electrical metrology
  • silicon
  • single-electron pump

Cite this

Rossi, A., Klochan, J., Timoshenko, J., Hudson, F. E., Möttönen, M., Rogge, S., ... Tettamanzi, G. C. (2018). Gigahertz single-electron pumping mediated by parasitic states. Nano Letters, 18(7), 4141-4147. https://doi.org/10.1021/acs.nanolett.8b00874
Rossi, Alessandro ; Klochan, Jevgeny ; Timoshenko, Janis ; Hudson, Fay E. ; Möttönen, Mikko ; Rogge, Sven ; Dzurak, Andrew S. ; Kashcheyevs, Vyacheslavs ; Tettamanzi, Giuseppe C. / Gigahertz single-electron pumping mediated by parasitic states. In: Nano Letters. 2018 ; Vol. 18, No. 7. pp. 4141-4147.
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Rossi, A, Klochan, J, Timoshenko, J, Hudson, FE, Möttönen, M, Rogge, S, Dzurak, AS, Kashcheyevs, V & Tettamanzi, GC 2018, 'Gigahertz single-electron pumping mediated by parasitic states' Nano Letters, vol. 18, no. 7, pp. 4141-4147. https://doi.org/10.1021/acs.nanolett.8b00874

Gigahertz single-electron pumping mediated by parasitic states. / Rossi, Alessandro; Klochan, Jevgeny; Timoshenko, Janis; Hudson, Fay E.; Möttönen, Mikko; Rogge, Sven; Dzurak, Andrew S.; Kashcheyevs, Vyacheslavs; Tettamanzi, Giuseppe C.

In: Nano Letters, Vol. 18, No. 7, 19.06.2018, p. 4141-4147.

Research output: Contribution to journalArticle

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AU - Kashcheyevs, Vyacheslavs

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Rossi A, Klochan J, Timoshenko J, Hudson FE, Möttönen M, Rogge S et al. Gigahertz single-electron pumping mediated by parasitic states. Nano Letters. 2018 Jun 19;18(7):4141-4147. https://doi.org/10.1021/acs.nanolett.8b00874