Abstract
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.
| Language | English |
|---|---|
| Pages | 4141-4147 |
| Number of pages | 7 |
| Journal | Nano Letters |
| Volume | 18 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 19 Jun 2018 |
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Keywords
- quantum dot
- quantum electrical metrology
- silicon
- single-electron pump
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Gigahertz single-electron pumping mediated by parasitic states. / Rossi, Alessandro; Klochan, Jevgeny; Timoshenko, Janis; Hudson, Fay E.; Möttönen, Mikko; Rogge, Sven; Dzurak, Andrew S.; Kashcheyevs, Vyacheslavs; Tettamanzi, Giuseppe C.
In: Nano Letters, Vol. 18, No. 7, 19.06.2018, p. 4141-4147.Research output: Contribution to journal › Article
TY - JOUR
T1 - Gigahertz single-electron pumping mediated by parasitic states
AU - Rossi, Alessandro
AU - Klochan, Jevgeny
AU - Timoshenko, Janis
AU - Hudson, Fay E.
AU - Möttönen, Mikko
AU - Rogge, Sven
AU - Dzurak, Andrew S.
AU - Kashcheyevs, Vyacheslavs
AU - Tettamanzi, Giuseppe C.
PY - 2018/6/19
Y1 - 2018/6/19
N2 - In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.
AB - In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.
KW - quantum dot
KW - quantum electrical metrology
KW - silicon
KW - single-electron pump
UR - http://www.scopus.com/inward/record.url?scp=85048887323&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.8b00874
DO - 10.1021/acs.nanolett.8b00874
M3 - Article
VL - 18
SP - 4141
EP - 4147
JO - Nano Letters
T2 - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 7
ER -