GHz photon-activated hopping between localized states in a silicon quantum dot

T. Ferrus*, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, D. A. Williams

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)
21 Downloads (Pure)


We discuss the effects of gigahertz photon irradiation on a degenerately phosphorus-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2 K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration.

Original languageEnglish
Article number013016
Number of pages18
JournalNew Journal of Physics
Publication statusPublished - 1 Jan 2014


  • quantum states
  • gigahertz photon irradiation
  • silicon quantum dots


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