Germanium–hydrogen pairs in silicon

B Hourahine, R Jones, S Öberg, P R Briddon, T Frauenheim

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Abstract

Hydrogen in a dilute SiGe alloy is considered theoretically in comparison with hydrogen in Si and Ge. Structural, vibrational and electronic properties of crystalline alloys containing {\sim } 1.6 at.% Ge complexed with single hydrogen atoms are considered. The behaviour of bond-centred hydrogen is found to be weakly perturbed, when compared to hydrogen in pure Si.
Original languageEnglish
Pages (from-to)S2803-S2807
Number of pages5
JournalJournal of Physics: Condensed Matter
Volume15
Issue number39
DOIs
Publication statusPublished - 19 Sep 2003

Keywords

  • hydrogen
  • silicon
  • SiGe alloys
  • germanium
  • crystalline alloys
  • bond-centred hydrogen

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  • Cite this

    Hourahine, B., Jones, R., Öberg, S., Briddon, P. R., & Frauenheim, T. (2003). Germanium–hydrogen pairs in silicon. Journal of Physics: Condensed Matter, 15(39), S2803-S2807. https://doi.org/10.1088/0953-8984/15/39/004