Gate driver circuit with all-magnetic isolation for cascode-connected SiC JFETs in a three-level T-type bridge-leg

Neville McNeill, Dimitrios Vozikis, Rafael Peña-Alzola, Shuren Wang, Richard Pollock, Derrick Holliday, Barry W. Williams

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Abstract

This article presents a gate driver circuit with all-magnetic isolation for driving silicon carbide (SiC) power devices in a three-level T-type bridge-leg. Gate driver circuitry for SiC devices has to be tolerant of rapid common-mode voltage changes. With respect to the resultant potentially problematic common-mode current paths, an arrangement of transformers is proposed for supplying the power devices with drive signals and power for their local floating gate driver circuits. The high-frequency carrier phase-switching technique is used to reduce the number of transformers. Signal timing and other implementation issues are addressed when using this arrangement with the T-type converter. The circuit is demonstrated in a 540 V bridge-leg constructed around 650 V and 1200 V cascode-connected normally-on SiC junction field effect transistors (JFETs).

Original languageEnglish
Article number1226
Number of pages16
JournalEnergies
Volume16
Issue number3
DOIs
Publication statusPublished - 23 Jan 2023

Keywords

  • cascode-connected
  • gate driver
  • isolation
  • JFET
  • silicon carbide
  • T-type converter

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