Gate-based single-shot readout of spins in silicon

Anderson West, Bas Hensen, Alexis Jouan, Tuomo Tanttu, Chih-Hwan Yang, Alessandro Rossi, M. Fernando Gonzalez-Zalba, Fay Hudson, Andrea Morello, David J. Reilly, Andrew S. Dzurak

Research output: Contribution to journalLetter

13 Citations (Scopus)

Abstract

Electron spins in silicon quantum dots provide a promising route towards realizing the large number of coupled qubits required for a useful quantum processor 1–7 . For the implementation of quantum algorithms and error detection 8–10 , qubit measurements are ideally performed in a single shot, which is presently achieved using on-chip charge sensors, capacitively coupled to the quantum dots 11 . However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots 12 . Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots 13–15 . This can be achieved using radiofrequency reflectometry on a single gate electrode defining the quantum dot itself 15–19 , significantly reducing the gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor.

LanguageEnglish
Pages437-443
Number of pages7
JournalNature Nanotechnology
Volume14
Issue number5
Early online date11 Mar 2019
DOIs
Publication statusPublished - 31 May 2019

Fingerprint

Silicon
Semiconductor quantum dots
shot
readout
quantum dots
silicon
Electron tunneling
electron tunneling
electron spin
central processing units
Electrons
sensors
Error detection
Sensors
footprints
proximity
chips
routes
impedance
Semiconductor materials

Keywords

  • nanoscale devices
  • quantum processing
  • quantum dots

Cite this

West, A., Hensen, B., Jouan, A., Tanttu, T., Yang, C-H., Rossi, A., ... Dzurak, A. S. (2019). Gate-based single-shot readout of spins in silicon. Nature Nanotechnology, 14(5), 437-443. https://doi.org/10.1038/s41565-019-0400-7
West, Anderson ; Hensen, Bas ; Jouan, Alexis ; Tanttu, Tuomo ; Yang, Chih-Hwan ; Rossi, Alessandro ; Gonzalez-Zalba, M. Fernando ; Hudson, Fay ; Morello, Andrea ; Reilly, David J. ; Dzurak, Andrew S. / Gate-based single-shot readout of spins in silicon. In: Nature Nanotechnology. 2019 ; Vol. 14, No. 5. pp. 437-443.
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West, A, Hensen, B, Jouan, A, Tanttu, T, Yang, C-H, Rossi, A, Gonzalez-Zalba, MF, Hudson, F, Morello, A, Reilly, DJ & Dzurak, AS 2019, 'Gate-based single-shot readout of spins in silicon' Nature Nanotechnology, vol. 14, no. 5, pp. 437-443. https://doi.org/10.1038/s41565-019-0400-7

Gate-based single-shot readout of spins in silicon. / West, Anderson; Hensen, Bas; Jouan, Alexis; Tanttu, Tuomo; Yang, Chih-Hwan; Rossi, Alessandro; Gonzalez-Zalba, M. Fernando; Hudson, Fay; Morello, Andrea; Reilly, David J.; Dzurak, Andrew S.

In: Nature Nanotechnology, Vol. 14, No. 5, 31.05.2019, p. 437-443.

Research output: Contribution to journalLetter

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AU - West, Anderson

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AU - Gonzalez-Zalba, M. Fernando

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West A, Hensen B, Jouan A, Tanttu T, Yang C-H, Rossi A et al. Gate-based single-shot readout of spins in silicon. Nature Nanotechnology. 2019 May 31;14(5):437-443. https://doi.org/10.1038/s41565-019-0400-7