GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

I. A. Ajia, Y. Yamashita, K. Lorenz, M. M. Muhammed, L. Spasevski, D. Almalawi, J. Xu, K. Iizuka, Y. Morishima, D. H. Anjum, N. Wei, R. W. Martin, A. Kuramata, I. S. Roqan

Research output: Contribution to journalArticle

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Abstract

GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 ¯ 01-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the 2 ¯ 01-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.

LanguageEnglish
Article number082102
Number of pages5
JournalApplied Physics Letters
Volume113
Issue number8
DOIs
Publication statusPublished - 20 Aug 2018

Fingerprint

quantum wells
sapphire
photoluminescence
atomic force microscopy
transmission electron microscopy
scanning electron microscopy
defects
curves
diffraction
excitation
x rays

Keywords

  • GaN/AlGaN multiple quantum wells
  • MQWs
  • UV
  • ultraviolet
  • photoluminescence excitation

Cite this

Ajia, I. A. ; Yamashita, Y. ; Lorenz, K. ; Muhammed, M. M. ; Spasevski, L. ; Almalawi, D. ; Xu, J. ; Iizuka, K. ; Morishima, Y. ; Anjum, D. H. ; Wei, N. ; Martin, R. W. ; Kuramata, A. ; Roqan, I. S. / GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices. In: Applied Physics Letters. 2018 ; Vol. 113, No. 8.
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abstract = "GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 ¯ 01-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the 2 ¯ 01-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.",
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author = "Ajia, {I. A.} and Y. Yamashita and K. Lorenz and Muhammed, {M. M.} and L. Spasevski and D. Almalawi and J. Xu and K. Iizuka and Y. Morishima and Anjum, {D. H.} and N. Wei and Martin, {R. W.} and A. Kuramata and Roqan, {I. S.}",
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Ajia, IA, Yamashita, Y, Lorenz, K, Muhammed, MM, Spasevski, L, Almalawi, D, Xu, J, Iizuka, K, Morishima, Y, Anjum, DH, Wei, N, Martin, RW, Kuramata, A & Roqan, IS 2018, 'GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices' Applied Physics Letters, vol. 113, no. 8, 082102. https://doi.org/10.1063/1.5025178

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices. / Ajia, I. A.; Yamashita, Y.; Lorenz, K.; Muhammed, M. M.; Spasevski, L.; Almalawi, D.; Xu, J.; Iizuka, K.; Morishima, Y.; Anjum, D. H.; Wei, N.; Martin, R. W.; Kuramata, A.; Roqan, I. S.

In: Applied Physics Letters, Vol. 113, No. 8, 082102, 20.08.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

AU - Ajia, I. A.

AU - Yamashita, Y.

AU - Lorenz, K.

AU - Muhammed, M. M.

AU - Spasevski, L.

AU - Almalawi, D.

AU - Xu, J.

AU - Iizuka, K.

AU - Morishima, Y.

AU - Anjum, D. H.

AU - Wei, N.

AU - Martin, R. W.

AU - Kuramata, A.

AU - Roqan, I. S.

PY - 2018/8/20

Y1 - 2018/8/20

N2 - GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 ¯ 01-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the 2 ¯ 01-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.

AB - GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 ¯ 01-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the 2 ¯ 01-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.

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