GaN-on-diamond technology platform: bonding-free membrane manufacturing process

Matthew D. Smith, Jerome A. Cuenca, Daniel E. Field, Yen-chun Fu, Chao Yuan, Fabien Massabuau, Soumen Mandal, James W. Pomeroy, Rachel A. Oliver, Michael J. Uren, Khaled Elgaid, Oliver A. Williams, Iain Thayne, Martin Kuball

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Abstract

GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and the diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creation of next generation high power electronic devices.

Original languageEnglish
Article number035306
Number of pages6
JournalAIP Advances
Volume10
Issue number3
Early online date3 Mar 2020
DOIs
Publication statusE-pub ahead of print - 3 Mar 2020

Keywords

  • GaN-on-diamond
  • atomic force microscopy
  • membrane manufacturing

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    Smith, M. D., Cuenca, J. A., Field, D. E., Fu, Y., Yuan, C., Massabuau, F., Mandal, S., Pomeroy, J. W., Oliver, R. A., Uren, M. J., Elgaid, K., Williams, O. A., Thayne, I., & Kuball, M. (2020). GaN-on-diamond technology platform: bonding-free membrane manufacturing process. AIP Advances, 10(3), [035306]. https://doi.org/10.1063/1.5129229