GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

H.W. Choi, C. Liu, E. Gu, G. McConnell, J.M. Girkin, I.M. Watson, M.D. Dawson

Research output: Contribution to journalArticlepeer-review

121 Citations (Scopus)


GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 µm and a root mean square roughness of ~1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters.
Original languageEnglish
Pages (from-to)2253-2255
Number of pages2
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2004


  • optics
  • photonics
  • microlenses
  • applied physics
  • quantum electronics
  • lasers


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