GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

H.W. Choi, C. Liu, E. Gu, G. McConnell, J.M. Girkin, I.M. Watson, M.D. Dawson

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 µm and a root mean square roughness of ~1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters.
LanguageEnglish
Pages2253-2255
Number of pages2
JournalApplied Physics Letters
Volume84
Issue number13
DOIs
Publication statusPublished - 2004

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sapphire
light emitting diodes
emitters
plasma etching
cones
roughness
etching
optical properties

Keywords

  • optics
  • photonics
  • microlenses
  • applied physics
  • quantum electronics
  • lasers

Cite this

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title = "GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses",
abstract = "GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 µm and a root mean square roughness of ~1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters.",
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author = "H.W. Choi and C. Liu and E. Gu and G. McConnell and J.M. Girkin and I.M. Watson and M.D. Dawson",
year = "2004",
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GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses. / Choi, H.W.; Liu, C.; Gu, E.; McConnell, G.; Girkin, J.M.; Watson, I.M.; Dawson, M.D.

In: Applied Physics Letters, Vol. 84, No. 13, 2004, p. 2253-2255.

Research output: Contribution to journalArticle

TY - JOUR

T1 - GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

AU - Choi, H.W.

AU - Liu, C.

AU - Gu, E.

AU - McConnell, G.

AU - Girkin, J.M.

AU - Watson, I.M.

AU - Dawson, M.D.

PY - 2004

Y1 - 2004

N2 - GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 µm and a root mean square roughness of ~1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters.

AB - GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 µm and a root mean square roughness of ~1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters.

KW - optics

KW - photonics

KW - microlenses

KW - applied physics

KW - quantum electronics

KW - lasers

UR - http://dx.doi.org/10.1063/1.1690876

U2 - 10.1063/1.1690876

DO - 10.1063/1.1690876

M3 - Article

VL - 84

SP - 2253

EP - 2255

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -