Abstract
GaN micro-LED devices with integrated micro-lenses have been demonstrated. The micro-lenses, with a focal length of 24 microns, are fabricated on the polished backside of the sapphire substrate by ICP etching.
Original language | English |
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Title of host publication | LEOS 2003: 16th Annual Meeting of the IEEE Lasers & Electro-Optics Society |
Publisher | IEEE |
Pages | 654-655 |
Number of pages | 1 |
Volume | 2 |
ISBN (Print) | 0-7803-7888-1 |
DOIs | |
Publication status | Published - 28 Oct 2003 |
Keywords
- gallium compounds
- integrated optics
- light emitting diodes
- LED
- microlenses
- optical arrays
- optical fabrication
- sapphire
- sputter etching
- surface roughness
- wide band gap semiconductors
- Non-controlled Indexing