GaN epilayers on misoriented substrates

C. Trager-Cowan, S. McArthur, P. G. Middleton, K. P. O'Donnell, D. Zubia, S. D. Hersee

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Three silicon-doped 3 μm thick GaN epilayers were grown simultaneously by metalorganic chemical vapour deposition on (0001) sapphire substrates misorientated by 0, 4 and 10° toward the m-plane (101̄0). A comparative study of these epilayers was undertaken using photoluminescence (PL) spectroscopy, atomic force microscopy (AFM) scanning electron microscopy (SEM), cathodoluminescence (CL) imaging and CL spectroscopy. Low temperature PL of the 0 and 4° epilayers shows bound exciton (BE) emission between 3.47 and 3.48 eV and a low level of yellow band emission. The peak intensities of both emission bands are a factor of 2 higher for the 4° layer. In the 10° epilayer, the BE band is 3 × stronger than in the 0° epilayer but there is no discernible yellow band. However, a number of additional bands appear at 3.459, 3.417, 3.362, 3.345, 3.309 and 3.285 eV. These bands may be attributed to the presence of structural defects in this epilayer, pointing to an abrupt degradation of its structural quality compared to the others. This degradation is confirmed by AFM studies. On a 20 × 20 μm2 image the 0 and 4° epilayers exhibit smooth surface morphologies, while the 10° epilayer shows a high density of hexagonal pits. Finally, SEM images reveal the surface of the 10° epilayer to be 'streaked' and pitted. Low temperature CL images at 3.48 eV (bound exciton region) show random spotty emission, while those at 3.28 eV and 3.41 eV exhibit a streaky appearance similar to the SEM image. This suggests that these luminescence bands are indeed associated with structural defects.

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Epilayers
Substrates
cathodoluminescence
Cathodoluminescence
Excitons
excitons
scanning electron microscopy
atomic force microscopy
Scanning electron microscopy
degradation
photoluminescence
Atomic force microscopy
defects
Degradation
Defects
spectroscopy
Photoluminescence spectroscopy
Aluminum Oxide
metalorganic chemical vapor deposition
Metallorganic chemical vapor deposition

Cite this

Trager-Cowan, C. ; McArthur, S. ; Middleton, P. G. ; O'Donnell, K. P. ; Zubia, D. ; Hersee, S. D. / GaN epilayers on misoriented substrates. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 1999 ; Vol. 59, No. 1-3. pp. 235-238.
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title = "GaN epilayers on misoriented substrates",
abstract = "Three silicon-doped 3 μm thick GaN epilayers were grown simultaneously by metalorganic chemical vapour deposition on (0001) sapphire substrates misorientated by 0, 4 and 10° toward the m-plane (101̄0). A comparative study of these epilayers was undertaken using photoluminescence (PL) spectroscopy, atomic force microscopy (AFM) scanning electron microscopy (SEM), cathodoluminescence (CL) imaging and CL spectroscopy. Low temperature PL of the 0 and 4° epilayers shows bound exciton (BE) emission between 3.47 and 3.48 eV and a low level of yellow band emission. The peak intensities of both emission bands are a factor of 2 higher for the 4° layer. In the 10° epilayer, the BE band is 3 × stronger than in the 0° epilayer but there is no discernible yellow band. However, a number of additional bands appear at 3.459, 3.417, 3.362, 3.345, 3.309 and 3.285 eV. These bands may be attributed to the presence of structural defects in this epilayer, pointing to an abrupt degradation of its structural quality compared to the others. This degradation is confirmed by AFM studies. On a 20 × 20 μm2 image the 0 and 4° epilayers exhibit smooth surface morphologies, while the 10° epilayer shows a high density of hexagonal pits. Finally, SEM images reveal the surface of the 10° epilayer to be 'streaked' and pitted. Low temperature CL images at 3.48 eV (bound exciton region) show random spotty emission, while those at 3.28 eV and 3.41 eV exhibit a streaky appearance similar to the SEM image. This suggests that these luminescence bands are indeed associated with structural defects.",
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GaN epilayers on misoriented substrates. / Trager-Cowan, C.; McArthur, S.; Middleton, P. G.; O'Donnell, K. P.; Zubia, D.; Hersee, S. D.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, No. 1-3, 06.05.1999, p. 235-238.

Research output: Contribution to journalConference article

TY - JOUR

T1 - GaN epilayers on misoriented substrates

AU - Trager-Cowan, C.

AU - McArthur, S.

AU - Middleton, P. G.

AU - O'Donnell, K. P.

AU - Zubia, D.

AU - Hersee, S. D.

PY - 1999/5/6

Y1 - 1999/5/6

N2 - Three silicon-doped 3 μm thick GaN epilayers were grown simultaneously by metalorganic chemical vapour deposition on (0001) sapphire substrates misorientated by 0, 4 and 10° toward the m-plane (101̄0). A comparative study of these epilayers was undertaken using photoluminescence (PL) spectroscopy, atomic force microscopy (AFM) scanning electron microscopy (SEM), cathodoluminescence (CL) imaging and CL spectroscopy. Low temperature PL of the 0 and 4° epilayers shows bound exciton (BE) emission between 3.47 and 3.48 eV and a low level of yellow band emission. The peak intensities of both emission bands are a factor of 2 higher for the 4° layer. In the 10° epilayer, the BE band is 3 × stronger than in the 0° epilayer but there is no discernible yellow band. However, a number of additional bands appear at 3.459, 3.417, 3.362, 3.345, 3.309 and 3.285 eV. These bands may be attributed to the presence of structural defects in this epilayer, pointing to an abrupt degradation of its structural quality compared to the others. This degradation is confirmed by AFM studies. On a 20 × 20 μm2 image the 0 and 4° epilayers exhibit smooth surface morphologies, while the 10° epilayer shows a high density of hexagonal pits. Finally, SEM images reveal the surface of the 10° epilayer to be 'streaked' and pitted. Low temperature CL images at 3.48 eV (bound exciton region) show random spotty emission, while those at 3.28 eV and 3.41 eV exhibit a streaky appearance similar to the SEM image. This suggests that these luminescence bands are indeed associated with structural defects.

AB - Three silicon-doped 3 μm thick GaN epilayers were grown simultaneously by metalorganic chemical vapour deposition on (0001) sapphire substrates misorientated by 0, 4 and 10° toward the m-plane (101̄0). A comparative study of these epilayers was undertaken using photoluminescence (PL) spectroscopy, atomic force microscopy (AFM) scanning electron microscopy (SEM), cathodoluminescence (CL) imaging and CL spectroscopy. Low temperature PL of the 0 and 4° epilayers shows bound exciton (BE) emission between 3.47 and 3.48 eV and a low level of yellow band emission. The peak intensities of both emission bands are a factor of 2 higher for the 4° layer. In the 10° epilayer, the BE band is 3 × stronger than in the 0° epilayer but there is no discernible yellow band. However, a number of additional bands appear at 3.459, 3.417, 3.362, 3.345, 3.309 and 3.285 eV. These bands may be attributed to the presence of structural defects in this epilayer, pointing to an abrupt degradation of its structural quality compared to the others. This degradation is confirmed by AFM studies. On a 20 × 20 μm2 image the 0 and 4° epilayers exhibit smooth surface morphologies, while the 10° epilayer shows a high density of hexagonal pits. Finally, SEM images reveal the surface of the 10° epilayer to be 'streaked' and pitted. Low temperature CL images at 3.48 eV (bound exciton region) show random spotty emission, while those at 3.28 eV and 3.41 eV exhibit a streaky appearance similar to the SEM image. This suggests that these luminescence bands are indeed associated with structural defects.

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U2 - 10.1016/S0921-5107(98)00373-0

DO - 10.1016/S0921-5107(98)00373-0

M3 - Conference article

VL - 59

SP - 235

EP - 238

JO - Materials Science and Engineering B

T2 - Materials Science and Engineering B

JF - Materials Science and Engineering B

SN - 0921-5107

IS - 1-3

ER -