GaN directional couplers for integrated quantum photonics

Zhang Yanfeng; Loyd James McKnight; Erman Engin; Ian Watson; Martin J. Cryan; Erdan Gu; Mark G. Thompson; Stephane Calvez; Jeremy L. O’Brien; Martin Dawson

doi:10.1063/1.3656073

GaN directional couplers for integrated quantum photonics

Zhang Yanfeng, Loyd James McKnight, Erman Engin, Ian Watson, Martin J. Cryan, Erdan Gu, Mark G. Thompson, Stephane Calvez, Jeremy L. O’Brien, Martin Dawson

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip.

Original language	English
Article number	161119
Number of pages	3
Journal	Applied Physics Letters
Volume	99
Issue number	16
DOIs	https://doi.org/10.1063/1.3656073
Publication status	Published - 29 Oct 2011

Keywords

optics
GaN directional coupler
waveguides
directional couplers
wide band gap semiconductors
sputter etching

Access to Document

10.1063/1.3656073

Cite this

@article{c27f3202939c4215b8b3779f5f2b3efa,

title = "GaN directional couplers for integrated quantum photonics",

abstract = "Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip.",

keywords = "optics, GaN directional coupler , waveguides, directional couplers, wide band gap semiconductors , sputter etching",

author = "Zhang Yanfeng and McKnight, \{Loyd James\} and Erman Engin and Ian Watson and Cryan, \{Martin J.\} and Erdan Gu and Thompson, \{Mark G.\} and Stephane Calvez and O{\textquoteright}Brien, \{Jeremy L.\} and Martin Dawson",

year = "2011",

month = oct,

day = "29",

doi = "10.1063/1.3656073",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - GaN directional couplers for integrated quantum photonics

AU - Yanfeng, Zhang

AU - McKnight, Loyd James

AU - Engin, Erman

AU - Watson, Ian

AU - Cryan, Martin J.

AU - Gu, Erdan

AU - Thompson, Mark G.

AU - Calvez, Stephane

AU - O’Brien, Jeremy L.

AU - Dawson, Martin

PY - 2011/10/29

Y1 - 2011/10/29

N2 - Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip.

AB - Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip.

KW - optics

KW - GaN directional coupler

KW - waveguides

KW - directional couplers

KW - wide band gap semiconductors

KW - sputter etching

UR - https://www.scopus.com/pages/publications/80155154327

U2 - 10.1063/1.3656073

DO - 10.1063/1.3656073

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161119

ER -

GaN directional couplers for integrated quantum photonics

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Gallium nitride enabled hybrid and flexible photonics

MUSIC: MODULAR ULTRAFAST SOURCES

ADVANCED SOLID STATE LASER SOURCES AND SYSTEMS

Cite this

GaN directional couplers for integrated quantum photonics

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Gallium nitride enabled hybrid and flexible photonics

MUSIC: MODULAR ULTRAFAST SOURCES

ADVANCED SOLID STATE LASER SOURCES AND SYSTEMS

Cite this