GaN directional couplers for integrated quantum photonics

Zhang Yanfeng, Loyd James McKnight, Erman Engin, Ian Watson, Martin J. Cryan, Erdan Gu, Mark G. Thompson, Stephane Calvez, Jeremy L. O’Brien, Martin Dawson

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip.
LanguageEnglish
Article number161119
Number of pages3
JournalApplied Physics Letters
Volume99
Issue number16
DOIs
Publication statusPublished - 29 Oct 2011

Fingerprint

directional couplers
photonics
photons
plasma etching
inspection
flat surfaces
waveguides
interference
scanning electron microscopy
propagation
cross sections
geometry

Keywords

  • optics
  • GaN directional coupler
  • waveguides
  • directional couplers
  • wide band gap semiconductors
  • sputter etching

Cite this

Yanfeng, Zhang ; McKnight, Loyd James ; Engin, Erman ; Watson, Ian ; Cryan, Martin J. ; Gu, Erdan ; Thompson, Mark G. ; Calvez, Stephane ; O’Brien, Jeremy L. ; Dawson, Martin. / GaN directional couplers for integrated quantum photonics. In: Applied Physics Letters. 2011 ; Vol. 99, No. 16.
@article{c27f3202939c4215b8b3779f5f2b3efa,
title = "GaN directional couplers for integrated quantum photonics",
abstract = "Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip.",
keywords = "optics, GaN directional coupler , waveguides, directional couplers, wide band gap semiconductors , sputter etching",
author = "Zhang Yanfeng and McKnight, {Loyd James} and Erman Engin and Ian Watson and Cryan, {Martin J.} and Erdan Gu and Thompson, {Mark G.} and Stephane Calvez and O’Brien, {Jeremy L.} and Martin Dawson",
year = "2011",
month = "10",
day = "29",
doi = "10.1063/1.3656073",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "16",

}

Yanfeng, Z, McKnight, LJ, Engin, E, Watson, I, Cryan, MJ, Gu, E, Thompson, MG, Calvez, S, O’Brien, JL & Dawson, M 2011, 'GaN directional couplers for integrated quantum photonics' Applied Physics Letters, vol. 99, no. 16, 161119. https://doi.org/10.1063/1.3656073

GaN directional couplers for integrated quantum photonics. / Yanfeng, Zhang; McKnight, Loyd James; Engin, Erman; Watson, Ian; Cryan, Martin J.; Gu, Erdan; Thompson, Mark G.; Calvez, Stephane; O’Brien, Jeremy L.; Dawson, Martin.

In: Applied Physics Letters, Vol. 99, No. 16, 161119, 29.10.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - GaN directional couplers for integrated quantum photonics

AU - Yanfeng, Zhang

AU - McKnight, Loyd James

AU - Engin, Erman

AU - Watson, Ian

AU - Cryan, Martin J.

AU - Gu, Erdan

AU - Thompson, Mark G.

AU - Calvez, Stephane

AU - O’Brien, Jeremy L.

AU - Dawson, Martin

PY - 2011/10/29

Y1 - 2011/10/29

N2 - Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip.

AB - Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip.

KW - optics

KW - GaN directional coupler

KW - waveguides

KW - directional couplers

KW - wide band gap semiconductors

KW - sputter etching

UR - http://www.scopus.com/inward/record.url?scp=80155154327&partnerID=8YFLogxK

U2 - 10.1063/1.3656073

DO - 10.1063/1.3656073

M3 - Article

VL - 99

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 161119

ER -