GaInNAs(Sb) surface normal devices

S. Calvez, N. Laurand, H.D. Sun, J. Weda, D. Burns, M.D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J.A. Gupta, C.G. Leburn, C.T.A. Brown, W. Sibbett

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs).
LanguageEnglish
Pages85-92
Number of pages7
JournalPhysics Status Solidi A
Volume205
Issue number1
DOIs
Publication statusPublished - 2007

Fingerprint

exploitation
surface emitting lasers
absorbers
mirrors
cavities

Keywords

  • 42.55.Px
  • 42.79.Hp
  • solid state physics
  • photonics
  • mirrors
  • optics
  • light

Cite this

Calvez, S., Laurand, N., Sun, H. D., Weda, J., Burns, D., Dawson, M. D., ... Sibbett, W. (2007). GaInNAs(Sb) surface normal devices. Physics Status Solidi A, 205(1), 85-92. https://doi.org/10.1002/pssa.200777460
Calvez, S. ; Laurand, N. ; Sun, H.D. ; Weda, J. ; Burns, D. ; Dawson, M.D. ; Harkonen, A. ; Jouhti, T. ; Pessa, M. ; Hopkinson, M. ; Poitras, D. ; Gupta, J.A. ; Leburn, C.G. ; Brown, C.T.A. ; Sibbett, W. / GaInNAs(Sb) surface normal devices. In: Physics Status Solidi A. 2007 ; Vol. 205, No. 1. pp. 85-92.
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author = "S. Calvez and N. Laurand and H.D. Sun and J. Weda and D. Burns and M.D. Dawson and A. Harkonen and T. Jouhti and M. Pessa and M. Hopkinson and D. Poitras and J.A. Gupta and C.G. Leburn and C.T.A. Brown and W. Sibbett",
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Calvez, S, Laurand, N, Sun, HD, Weda, J, Burns, D, Dawson, MD, Harkonen, A, Jouhti, T, Pessa, M, Hopkinson, M, Poitras, D, Gupta, JA, Leburn, CG, Brown, CTA & Sibbett, W 2007, 'GaInNAs(Sb) surface normal devices' Physics Status Solidi A, vol. 205, no. 1, pp. 85-92. https://doi.org/10.1002/pssa.200777460

GaInNAs(Sb) surface normal devices. / Calvez, S.; Laurand, N.; Sun, H.D.; Weda, J.; Burns, D.; Dawson, M.D.; Harkonen, A.; Jouhti, T.; Pessa, M.; Hopkinson, M.; Poitras, D.; Gupta, J.A.; Leburn, C.G.; Brown, C.T.A.; Sibbett, W.

In: Physics Status Solidi A, Vol. 205, No. 1, 2007, p. 85-92.

Research output: Contribution to journalArticle

TY - JOUR

T1 - GaInNAs(Sb) surface normal devices

AU - Calvez, S.

AU - Laurand, N.

AU - Sun, H.D.

AU - Weda, J.

AU - Burns, D.

AU - Dawson, M.D.

AU - Harkonen, A.

AU - Jouhti, T.

AU - Pessa, M.

AU - Hopkinson, M.

AU - Poitras, D.

AU - Gupta, J.A.

AU - Leburn, C.G.

AU - Brown, C.T.A.

AU - Sibbett, W.

PY - 2007

Y1 - 2007

N2 - After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs).

AB - After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs).

KW - 42.55.Px

KW - 42.79.Hp

KW - solid state physics

KW - photonics

KW - mirrors

KW - optics

KW - light

UR - http://dx.doi.org/10.1002/pssa.200777460

U2 - 10.1002/pssa.200777460

DO - 10.1002/pssa.200777460

M3 - Article

VL - 205

SP - 85

EP - 92

JO - Physics Status Solidi A

T2 - Physics Status Solidi A

JF - Physics Status Solidi A

SN - 1521-396X

IS - 1

ER -