GaInNAs(Sb) surface normal devices

S. Calvez, N. Laurand, H.D. Sun, J. Weda, D. Burns, M.D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J.A. Gupta, C.G. Leburn, C.T.A. Brown, W. Sibbett

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs).
Original languageEnglish
Pages (from-to)85-92
Number of pages7
JournalPhysics Status Solidi A
Volume205
Issue number1
DOIs
Publication statusPublished - 2007

    Fingerprint

Keywords

  • 42.55.Px
  • 42.79.Hp
  • solid state physics
  • photonics
  • mirrors
  • optics
  • light

Cite this

Calvez, S., Laurand, N., Sun, H. D., Weda, J., Burns, D., Dawson, M. D., ... Sibbett, W. (2007). GaInNAs(Sb) surface normal devices. Physics Status Solidi A, 205(1), 85-92. https://doi.org/10.1002/pssa.200777460