GaInNAs(Sb) for solid-state laser engineering

S. Calvez

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-based devices to the application-rich wavelength band ranging from 1100 to 1700 nm. In this article, we review our recent advances in the development of dilute nitride components whose prime application is aimed at the development of more advanced solid-state lasers. In particular, we present Vertical (External) Cavity Surface Emitting Lasers also known as Semiconductor Disk Lasers and their use as pump sources for thulium-doped lasers, Raman fibre amplification or as compact sources for yellow/red emission. We will also show that GaInNAsSb Semiconductor Saturable Absorber Mirrors (SESAMs) can be effective elements to trigger and maintain pico/femtosecond pulse operation in mode-locked solid-state lasers. Finally, we will introduce methods exploiting the above-mentioned SESAMs to control the regime of operation of ultrafast lasers.
LanguageEnglish
Title of host publication2011 13th International conference on transparent optical networks (ICTON)
EditorsM. Jaworski, M. Marciniak
Place of PublicationNew York
PublisherIEEE
Number of pages4
ISBN (Print)9781457708800
DOIs
Publication statusPublished - Jun 2011

Fingerprint

solid state lasers
engineering
absorbers
mirrors
thulium
Raman lasers
surface emitting lasers
lasers
nitrides
actuators
pumps
cavities
fibers
pulses
wavelengths

Keywords

  • saturable absorber
  • mu-m
  • generation
  • modelocking
  • lasers
  • semiconductor disk lasers
  • GaInNAsSb
  • SESAM

Cite this

Calvez, S. (2011). GaInNAs(Sb) for solid-state laser engineering. In M. Jaworski, & M. Marciniak (Eds.), 2011 13th International conference on transparent optical networks (ICTON) New York: IEEE. https://doi.org/10.1109/ICTON.2011.5970793
Calvez, S. / GaInNAs(Sb) for solid-state laser engineering. 2011 13th International conference on transparent optical networks (ICTON). editor / M. Jaworski ; M. Marciniak. New York : IEEE, 2011.
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title = "GaInNAs(Sb) for solid-state laser engineering",
abstract = "Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-based devices to the application-rich wavelength band ranging from 1100 to 1700 nm. In this article, we review our recent advances in the development of dilute nitride components whose prime application is aimed at the development of more advanced solid-state lasers. In particular, we present Vertical (External) Cavity Surface Emitting Lasers also known as Semiconductor Disk Lasers and their use as pump sources for thulium-doped lasers, Raman fibre amplification or as compact sources for yellow/red emission. We will also show that GaInNAsSb Semiconductor Saturable Absorber Mirrors (SESAMs) can be effective elements to trigger and maintain pico/femtosecond pulse operation in mode-locked solid-state lasers. Finally, we will introduce methods exploiting the above-mentioned SESAMs to control the regime of operation of ultrafast lasers.",
keywords = "saturable absorber, mu-m, generation, modelocking, lasers, semiconductor disk lasers, GaInNAsSb, SESAM",
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Calvez, S 2011, GaInNAs(Sb) for solid-state laser engineering. in M Jaworski & M Marciniak (eds), 2011 13th International conference on transparent optical networks (ICTON). IEEE, New York. https://doi.org/10.1109/ICTON.2011.5970793

GaInNAs(Sb) for solid-state laser engineering. / Calvez, S.

2011 13th International conference on transparent optical networks (ICTON). ed. / M. Jaworski; M. Marciniak. New York : IEEE, 2011.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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N2 - Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-based devices to the application-rich wavelength band ranging from 1100 to 1700 nm. In this article, we review our recent advances in the development of dilute nitride components whose prime application is aimed at the development of more advanced solid-state lasers. In particular, we present Vertical (External) Cavity Surface Emitting Lasers also known as Semiconductor Disk Lasers and their use as pump sources for thulium-doped lasers, Raman fibre amplification or as compact sources for yellow/red emission. We will also show that GaInNAsSb Semiconductor Saturable Absorber Mirrors (SESAMs) can be effective elements to trigger and maintain pico/femtosecond pulse operation in mode-locked solid-state lasers. Finally, we will introduce methods exploiting the above-mentioned SESAMs to control the regime of operation of ultrafast lasers.

AB - Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-based devices to the application-rich wavelength band ranging from 1100 to 1700 nm. In this article, we review our recent advances in the development of dilute nitride components whose prime application is aimed at the development of more advanced solid-state lasers. In particular, we present Vertical (External) Cavity Surface Emitting Lasers also known as Semiconductor Disk Lasers and their use as pump sources for thulium-doped lasers, Raman fibre amplification or as compact sources for yellow/red emission. We will also show that GaInNAsSb Semiconductor Saturable Absorber Mirrors (SESAMs) can be effective elements to trigger and maintain pico/femtosecond pulse operation in mode-locked solid-state lasers. Finally, we will introduce methods exploiting the above-mentioned SESAMs to control the regime of operation of ultrafast lasers.

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Calvez S. GaInNAs(Sb) for solid-state laser engineering. In Jaworski M, Marciniak M, editors, 2011 13th International conference on transparent optical networks (ICTON). New York: IEEE. 2011 https://doi.org/10.1109/ICTON.2011.5970793