GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications

S. Calvez, J.M. Hopkins, S.A. Smith, A.H. Clark, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa, K. Gundogdu, K.C. Hall, T.F. Boggess

Research output: Contribution to journalArticle

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Abstract

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
LanguageEnglish
Pages457-465
Number of pages9
JournalJournal of Crystal Growth
Volume268
Issue number3-4
DOIs
Publication statusPublished - 1 Aug 2004

Fingerprint

Surface emitting lasers
optical pumping
Bragg reflectors
solid state lasers
Mirrors
cavities
annealing
fibers
output
wavelengths
Optical pumping
Optical fiber coupling
Solid state lasers
Demonstrations
Annealing
Wavelength
gallium arsenide

Keywords

  • dilute nitrides
  • semiconducting III-V materials
  • semiconducting quaternary alloys
  • solid state lasers
  • vertical-cavity devices
  • vertical-cavity surface emitting lasers

Cite this

Calvez, S., Hopkins, J. M., Smith, S. A., Clark, A. H., Macaluso, R., Sun, H. D., ... Boggess, T. F. (2004). GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications. Journal of Crystal Growth, 268(3-4), 457-465. https://doi.org/10.1016/j.jcrysgro.2004.04.072
Calvez, S. ; Hopkins, J.M. ; Smith, S.A. ; Clark, A.H. ; Macaluso, R. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; Pessa, M. ; Gundogdu, K. ; Hall, K.C. ; Boggess, T.F. / GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications. In: Journal of Crystal Growth. 2004 ; Vol. 268, No. 3-4. pp. 457-465.
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abstract = "We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.",
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author = "S. Calvez and J.M. Hopkins and S.A. Smith and A.H. Clark and R. Macaluso and H.D. Sun and M.D. Dawson and T. Jouhti and M. Pessa and K. Gundogdu and K.C. Hall and T.F. Boggess",
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Calvez, S, Hopkins, JM, Smith, SA, Clark, AH, Macaluso, R, Sun, HD, Dawson, MD, Jouhti, T, Pessa, M, Gundogdu, K, Hall, KC & Boggess, TF 2004, 'GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications' Journal of Crystal Growth, vol. 268, no. 3-4, pp. 457-465. https://doi.org/10.1016/j.jcrysgro.2004.04.072

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications. / Calvez, S.; Hopkins, J.M.; Smith, S.A.; Clark, A.H.; Macaluso, R.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; Pessa, M.; Gundogdu, K.; Hall, K.C.; Boggess, T.F.

In: Journal of Crystal Growth, Vol. 268, No. 3-4, 01.08.2004, p. 457-465.

Research output: Contribution to journalArticle

TY - JOUR

T1 - GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications

AU - Calvez, S.

AU - Hopkins, J.M.

AU - Smith, S.A.

AU - Clark, A.H.

AU - Macaluso, R.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Pessa, M.

AU - Gundogdu, K.

AU - Hall, K.C.

AU - Boggess, T.F.

N1 - Also present at: http://strathprints.strath.ac.uk/8964/

PY - 2004/8/1

Y1 - 2004/8/1

N2 - We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

AB - We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

KW - dilute nitrides

KW - semiconducting III-V materials

KW - semiconducting quaternary alloys

KW - solid state lasers

KW - vertical-cavity devices

KW - vertical-cavity surface emitting lasers

U2 - 10.1016/j.jcrysgro.2004.04.072

DO - 10.1016/j.jcrysgro.2004.04.072

M3 - Article

VL - 268

SP - 457

EP - 465

JO - Journal of Crystal Growth

T2 - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -

Calvez S, Hopkins JM, Smith SA, Clark AH, Macaluso R, Sun HD et al. GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications. Journal of Crystal Growth. 2004 Aug 1;268(3-4):457-465. https://doi.org/10.1016/j.jcrysgro.2004.04.072