GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications

S. Calvez, J.M. Hopkins, S.A. Smith, A.H. Clark, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa, K. Gundogdu, K.C. Hall, T.F. Boggess

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Abstract

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
Original languageEnglish
Pages (from-to)457-465
Number of pages9
JournalJournal of Crystal Growth
Volume268
Issue number3-4
DOIs
Publication statusPublished - 1 Aug 2004

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Keywords

  • dilute nitrides
  • semiconducting III-V materials
  • semiconducting quaternary alloys
  • solid state lasers
  • vertical-cavity devices
  • vertical-cavity surface emitting lasers

Cite this

Calvez, S., Hopkins, J. M., Smith, S. A., Clark, A. H., Macaluso, R., Sun, H. D., ... Boggess, T. F. (2004). GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications. Journal of Crystal Growth, 268(3-4), 457-465. https://doi.org/10.1016/j.jcrysgro.2004.04.072