Abstract
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
Original language | English |
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Pages (from-to) | 457-465 |
Number of pages | 9 |
Journal | Journal of Crystal Growth |
Volume | 268 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 1 Aug 2004 |
Keywords
- dilute nitrides
- semiconducting III-V materials
- semiconducting quaternary alloys
- solid state lasers
- vertical-cavity devices
- vertical-cavity surface emitting lasers