We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
- dilute nitrides
- semiconducting III-V materials
- semiconducting quaternary alloys
- solid state lasers
- vertical-cavity devices
- vertical-cavity surface emitting lasers
Calvez, S., Hopkins, J. M., Smith, S. A., Clark, A. H., Macaluso, R., Sun, H. D., ... Boggess, T. F. (2004). GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications. Journal of Crystal Growth, 268(3-4), 457-465. https://doi.org/10.1016/j.jcrysgro.2004.04.072