GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications

S. Calvez; J.M. Hopkins; S.A. Smith; A.H. Clark; R. Macaluso; H.D. Sun; M.D. Dawson; T. Jouhti; M. Pessa; K. Gundogdu; K.C. Hall; T.F. Boggess

doi:10.1016/j.jcrysgro.2004.04.072

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications

S. Calvez, J.M. Hopkins, S.A. Smith, A.H. Clark, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa, K. Gundogdu, K.C. Hall, T.F. Boggess

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

Original language	English
Pages (from-to)	457-465
Number of pages	9
Journal	Journal of Crystal Growth
Volume	268
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.072
Publication status	Published - 1 Aug 2004

Keywords

dilute nitrides
semiconducting III-V materials
semiconducting quaternary alloys
solid state lasers
vertical-cavity devices
vertical-cavity surface emitting lasers

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10.1016/j.jcrysgro.2004.04.072

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@article{8b3419ca67a643b5a1e9544d2a8c6d5d,

title = "GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications",

abstract = "We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.",

keywords = "dilute nitrides, semiconducting III-V materials, semiconducting quaternary alloys, solid state lasers, vertical-cavity devices, vertical-cavity surface emitting lasers",

author = "S. Calvez and J.M. Hopkins and S.A. Smith and A.H. Clark and R. Macaluso and H.D. Sun and M.D. Dawson and T. Jouhti and M. Pessa and K. Gundogdu and K.C. Hall and T.F. Boggess",

note = "Also present at: http://strathprints.strath.ac.uk/8964/",

year = "2004",

month = aug,

day = "1",

doi = "10.1016/j.jcrysgro.2004.04.072",

language = "English",

volume = "268",

pages = "457--465",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3-4",

}

TY - JOUR

T1 - GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications

AU - Calvez, S.

AU - Hopkins, J.M.

AU - Smith, S.A.

AU - Clark, A.H.

AU - Macaluso, R.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Pessa, M.

AU - Gundogdu, K.

AU - Hall, K.C.

AU - Boggess, T.F.

N1 - Also present at: http://strathprints.strath.ac.uk/8964/

PY - 2004/8/1

Y1 - 2004/8/1

N2 - We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

AB - We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

KW - dilute nitrides

KW - semiconducting III-V materials

KW - semiconducting quaternary alloys

KW - solid state lasers

KW - vertical-cavity devices

KW - vertical-cavity surface emitting lasers

U2 - 10.1016/j.jcrysgro.2004.04.072

DO - 10.1016/j.jcrysgro.2004.04.072

M3 - Article

SN - 0022-0248

VL - 268

SP - 457

EP - 465

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications

Abstract

Keywords

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