GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

M.D. Dawson, S. Calvez, M. Pessa, H.D. Sun, J.M. Hopkins, S.A. Smith, A.H. Clark, R. Macaluso, T. Jouhti, K. Gundogdu, K.C. Hall, T.F. Boggess

Research output: Contribution to conferencePaper

Abstract

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
Original languageEnglish
Publication statusPublished - Dec 2003
EventICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications - singapore
Duration: 7 Dec 200312 Dec 2003

Conference

ConferenceICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications
Citysingapore
Period7/12/0312/12/03

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Keywords

  • dilute nitrides
  • semiconducting III–V materials
  • semiconducting quaternary alloys
  • solid state lasers
  • vertical-cavity surface emitting lasers

Cite this

Dawson, M. D., Calvez, S., Pessa, M., Sun, H. D., Hopkins, J. M., Smith, S. A., ... Boggess, T. F. (2003). GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore, .