We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
|Publication status||Published - Dec 2003|
|Event||ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications - singapore|
Duration: 7 Dec 2003 → 12 Dec 2003
|Conference||ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications|
|Period||7/12/03 → 12/12/03|
- dilute nitrides
- semiconducting III–V materials
- semiconducting quaternary alloys
- solid state lasers
- vertical-cavity surface emitting lasers
Dawson, M. D., Calvez, S., Pessa, M., Sun, H. D., Hopkins, J. M., Smith, S. A., ... Boggess, T. F. (2003). GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore, .