GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

M.D. Dawson; S. Calvez; M. Pessa; H.D. Sun; J.M. Hopkins; S.A. Smith; A.H. Clark; R. Macaluso; T. Jouhti; K. Gundogdu; K.C. Hall; T.F. Boggess

GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

M.D. Dawson, S. Calvez, M. Pessa, H.D. Sun, J.M. Hopkins, S.A. Smith, A.H. Clark, R. Macaluso, T. Jouhti, K. Gundogdu, K.C. Hall, T.F. Boggess

Research output: Contribution to conference › Paper

Abstract

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

Original language	English
Publication status	Published - Dec 2003
Event	ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications - singapore Duration: 7 Dec 2003 → 12 Dec 2003

Conference

Conference	ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications
City	singapore
Period	7/12/03 → 12/12/03

Keywords

dilute nitrides
semiconducting III–V materials
semiconducting quaternary alloys
solid state lasers
vertical-cavity surface emitting lasers

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Dawson, M. D., Calvez, S., Pessa, M., Sun, H. D., Hopkins, J. M., Smith, S. A., Clark, A. H., Macaluso, R., Jouhti, T., Gundogdu, K., Hall, K. C., & Boggess, T. F. (2003). GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore.

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title = "GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications",

abstract = "We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.",

keywords = "dilute nitrides, semiconducting III–V materials, semiconducting quaternary alloys, solid state lasers, vertical-cavity surface emitting lasers",

author = "M.D. Dawson and S. Calvez and M. Pessa and H.D. Sun and J.M. Hopkins and S.A. Smith and A.H. Clark and R. Macaluso and T. Jouhti and K. Gundogdu and K.C. Hall and T.F. Boggess",

note = "Also present at http://strathprints.strath.ac.uk/5245/; ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications ; Conference date: 07-12-2003 Through 12-12-2003",

year = "2003",

month = dec,

language = "English",

}

Dawson, MD, Calvez, S, Pessa, M, Sun, HD, Hopkins, JM, Smith, SA, Clark, AH, Macaluso, R, Jouhti, T, Gundogdu, K, Hall, KC & Boggess, TF 2003, 'GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications', Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore, 7/12/03 - 12/12/03.

TY - CONF

T1 - GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

AU - Dawson, M.D.

AU - Calvez, S.

AU - Pessa, M.

AU - Sun, H.D.

AU - Hopkins, J.M.

AU - Smith, S.A.

AU - Clark, A.H.

AU - Macaluso, R.

AU - Jouhti, T.

AU - Gundogdu, K.

AU - Hall, K.C.

AU - Boggess, T.F.

N1 - Also present at http://strathprints.strath.ac.uk/5245/

PY - 2003/12

Y1 - 2003/12

N2 - We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

AB - We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

KW - dilute nitrides

KW - semiconducting III–V materials

KW - semiconducting quaternary alloys

KW - solid state lasers

KW - vertical-cavity surface emitting lasers

UR - http://www.mrs.org.sg/icmat2003/sym_d.html

UR - http://dx.doi.org/10.1016/j.jcrysgro.2004.04.072

M3 - Paper

T2 - ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications

Y2 - 7 December 2003 through 12 December 2003

ER -

GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

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Keywords

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