GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

M.D. Dawson, S. Calvez, M. Pessa, H.D. Sun, J.M. Hopkins, S.A. Smith, A.H. Clark, R. Macaluso, T. Jouhti, K. Gundogdu, K.C. Hall, T.F. Boggess

Research output: Contribution to conferencePaper

Abstract

We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

Conference

ConferenceICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications
Citysingapore
Period7/12/0312/12/03

Fingerprint

optical pumping
Bragg reflectors
solid state lasers
cavities
annealing
fibers
output
wavelengths

Keywords

  • dilute nitrides
  • semiconducting III–V materials
  • semiconducting quaternary alloys
  • solid state lasers
  • vertical-cavity surface emitting lasers

Cite this

Dawson, M. D., Calvez, S., Pessa, M., Sun, H. D., Hopkins, J. M., Smith, S. A., ... Boggess, T. F. (2003). GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore, .
Dawson, M.D. ; Calvez, S. ; Pessa, M. ; Sun, H.D. ; Hopkins, J.M. ; Smith, S.A. ; Clark, A.H. ; Macaluso, R. ; Jouhti, T. ; Gundogdu, K. ; Hall, K.C. ; Boggess, T.F. / GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore, .
@conference{9e406d7a2eb64d3e92d402872de4f6de,
title = "GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications",
abstract = "We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.",
keywords = "dilute nitrides, semiconducting III–V materials, semiconducting quaternary alloys, solid state lasers, vertical-cavity surface emitting lasers",
author = "M.D. Dawson and S. Calvez and M. Pessa and H.D. Sun and J.M. Hopkins and S.A. Smith and A.H. Clark and R. Macaluso and T. Jouhti and K. Gundogdu and K.C. Hall and T.F. Boggess",
note = "Also present at http://strathprints.strath.ac.uk/5245/; ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications ; Conference date: 07-12-2003 Through 12-12-2003",
year = "2003",
month = "12",
language = "English",

}

Dawson, MD, Calvez, S, Pessa, M, Sun, HD, Hopkins, JM, Smith, SA, Clark, AH, Macaluso, R, Jouhti, T, Gundogdu, K, Hall, KC & Boggess, TF 2003, 'GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications' Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore, 7/12/03 - 12/12/03, .

GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. / Dawson, M.D.; Calvez, S.; Pessa, M.; Sun, H.D.; Hopkins, J.M.; Smith, S.A.; Clark, A.H.; Macaluso, R.; Jouhti, T.; Gundogdu, K.; Hall, K.C.; Boggess, T.F.

2003. Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications

AU - Dawson, M.D.

AU - Calvez, S.

AU - Pessa, M.

AU - Sun, H.D.

AU - Hopkins, J.M.

AU - Smith, S.A.

AU - Clark, A.H.

AU - Macaluso, R.

AU - Jouhti, T.

AU - Gundogdu, K.

AU - Hall, K.C.

AU - Boggess, T.F.

N1 - Also present at http://strathprints.strath.ac.uk/5245/

PY - 2003/12

Y1 - 2003/12

N2 - We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

AB - We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 μm VECSEL with more than 0.5 W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

KW - dilute nitrides

KW - semiconducting III–V materials

KW - semiconducting quaternary alloys

KW - solid state lasers

KW - vertical-cavity surface emitting lasers

UR - http://www.mrs.org.sg/icmat2003/sym_d.html

UR - http://dx.doi.org/10.1016/j.jcrysgro.2004.04.072

M3 - Paper

ER -

Dawson MD, Calvez S, Pessa M, Sun HD, Hopkins JM, Smith SA et al. GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. 2003. Paper presented at ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, singapore, .