GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

G. Vysniauskas; M. Hetterich; R. Macaluso; D. Burns; M.D. Dawson; E.A.J.M. Bente; A.Y. Egorov; H. Riechert

doi:10.1109/CLEO.2001.947787

GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

G. Vysniauskas, M. Hetterich, R. Macaluso, D. Burns, M.D. Dawson, E.A.J.M. Bente, A.Y. Egorov, H. Riechert

Institute Of Photonics

Research output: Contribution to conference › Paper

Abstract

In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

Original language	English
Pages	267-268
Number of pages	2
DOIs	https://doi.org/10.1109/CLEO.2001.947787
Publication status	Published - May 2001
Event	Conference on Lasers and Electro-Optics, 2001. CLEO '01 - Baltimore, United States Duration: 6 May 2001 → 11 May 2001

Conference

Conference	Conference on Lasers and Electro-Optics, 2001. CLEO '01
Country/Territory	United States
City	Baltimore
Period	6/05/01 → 11/05/01

Keywords

diode lasers
vertical cavity surface emitting lasers
semiconductor materials
semiconductor lasers
optical materials
optical fibers
mirrors
laser modes
gallium arsenide
fiber lasers
modelocking
laser
structure
GaInNAs VCSEL

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10.1109/CLEO.2001.947787

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@conference{1e6d3de6bc2442d680a4db084b8bf7fd,

title = "GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser",

abstract = "In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.",

keywords = "diode lasers, vertical cavity surface emitting lasers, semiconductor materials, semiconductor lasers, optical materials, optical fibers , mirrors, laser modes , gallium arsenide, fiber lasers , modelocking, laser, structure, GaInNAs VCSEL ",

author = "G. Vysniauskas and M. Hetterich and R. Macaluso and D. Burns and M.D. Dawson and E.A.J.M. Bente and A.Y. Egorov and H. Riechert",

year = "2001",

month = may,

doi = "10.1109/CLEO.2001.947787",

language = "English",

pages = "267--268",

note = "Conference on Lasers and Electro-Optics, 2001. CLEO '01 ; Conference date: 06-05-2001 Through 11-05-2001",

}

TY - CONF

T1 - GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

AU - Vysniauskas, G.

AU - Hetterich, M.

AU - Macaluso, R.

AU - Burns, D.

AU - Dawson, M.D.

AU - Bente, E.A.J.M.

AU - Egorov, A.Y.

AU - Riechert, H.

PY - 2001/5

Y1 - 2001/5

N2 - In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

AB - In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

KW - diode lasers

KW - vertical cavity surface emitting lasers

KW - semiconductor materials

KW - semiconductor lasers

KW - optical materials

KW - optical fibers

KW - mirrors

KW - laser modes

KW - gallium arsenide

KW - fiber lasers

KW - modelocking

KW - laser

KW - structure

KW - GaInNAs VCSEL

U2 - 10.1109/CLEO.2001.947787

DO - 10.1109/CLEO.2001.947787

M3 - Paper

SP - 267

EP - 268

T2 - Conference on Lasers and Electro-Optics, 2001. CLEO '01

Y2 - 6 May 2001 through 11 May 2001

ER -

GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

Abstract

Conference

Keywords

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