GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

G. Vysniauskas, M. Hetterich, R. Macaluso, D. Burns, M.D. Dawson, E.A.J.M. Bente, A.Y. Egorov, H. Riechert

Research output: Contribution to conferencePaper

Abstract

In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.
Original languageEnglish
Pages267-268
Number of pages2
DOIs
Publication statusPublished - May 2001
EventConference on Lasers and Electro-Optics, 2001. CLEO '01 - Baltimore, United States
Duration: 6 May 200111 May 2001

Conference

ConferenceConference on Lasers and Electro-Optics, 2001. CLEO '01
CountryUnited States
CityBaltimore
Period6/05/0111/05/01

    Fingerprint

Keywords

  • diode lasers
  • vertical cavity surface emitting lasers
  • semiconductor materials
  • semiconductor lasers
  • optical materials
  • optical fibers
  • mirrors
  • laser modes
  • gallium arsenide
  • fiber lasers
  • modelocking
  • laser
  • structure
  • GaInNAs VCSEL

Cite this

Vysniauskas, G., Hetterich, M., Macaluso, R., Burns, D., Dawson, M. D., Bente, E. A. J. M., ... Riechert, H. (2001). GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. 267-268. Paper presented at Conference on Lasers and Electro-Optics, 2001. CLEO '01, Baltimore, United States. https://doi.org/10.1109/CLEO.2001.947787