GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

G. Vysniauskas, M. Hetterich, R. Macaluso, D. Burns, M.D. Dawson, E.A.J.M. Bente, A.Y. Egorov, H. Riechert

Research output: Contribution to conferencePaper

Abstract

In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

Conference

ConferenceConference on Lasers and Electro-Optics, 2001. CLEO '01
CountryUnited States
CityBaltimore
Period6/05/0111/05/01

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locking
lasers
absorbers
mirrors

Keywords

  • diode lasers
  • vertical cavity surface emitting lasers
  • semiconductor materials
  • semiconductor lasers
  • optical materials
  • optical fibers
  • mirrors
  • laser modes
  • gallium arsenide
  • fiber lasers
  • modelocking
  • laser
  • structure
  • GaInNAs VCSEL

Cite this

Vysniauskas, G., Hetterich, M., Macaluso, R., Burns, D., Dawson, M. D., Bente, E. A. J. M., ... Riechert, H. (2001). GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. 267-268. Paper presented at Conference on Lasers and Electro-Optics, 2001. CLEO '01, Baltimore, United States. https://doi.org/10.1109/CLEO.2001.947787
Vysniauskas, G. ; Hetterich, M. ; Macaluso, R. ; Burns, D. ; Dawson, M.D. ; Bente, E.A.J.M. ; Egorov, A.Y. ; Riechert, H. / GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. Paper presented at Conference on Lasers and Electro-Optics, 2001. CLEO '01, Baltimore, United States.2 p.
@conference{1e6d3de6bc2442d680a4db084b8bf7fd,
title = "GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser",
abstract = "In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.",
keywords = "diode lasers, vertical cavity surface emitting lasers, semiconductor materials, semiconductor lasers, optical materials, optical fibers , mirrors, laser modes , gallium arsenide, fiber lasers , modelocking, laser, structure, GaInNAs VCSEL",
author = "G. Vysniauskas and M. Hetterich and R. Macaluso and D. Burns and M.D. Dawson and E.A.J.M. Bente and A.Y. Egorov and H. Riechert",
year = "2001",
month = "5",
doi = "10.1109/CLEO.2001.947787",
language = "English",
pages = "267--268",
note = "Conference on Lasers and Electro-Optics, 2001. CLEO '01 ; Conference date: 06-05-2001 Through 11-05-2001",

}

Vysniauskas, G, Hetterich, M, Macaluso, R, Burns, D, Dawson, MD, Bente, EAJM, Egorov, AY & Riechert, H 2001, 'GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser' Paper presented at Conference on Lasers and Electro-Optics, 2001. CLEO '01, Baltimore, United States, 6/05/01 - 11/05/01, pp. 267-268. https://doi.org/10.1109/CLEO.2001.947787

GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. / Vysniauskas, G.; Hetterich, M.; Macaluso, R.; Burns, D.; Dawson, M.D.; Bente, E.A.J.M.; Egorov, A.Y.; Riechert, H.

2001. 267-268 Paper presented at Conference on Lasers and Electro-Optics, 2001. CLEO '01, Baltimore, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

AU - Vysniauskas, G.

AU - Hetterich, M.

AU - Macaluso, R.

AU - Burns, D.

AU - Dawson, M.D.

AU - Bente, E.A.J.M.

AU - Egorov, A.Y.

AU - Riechert, H.

PY - 2001/5

Y1 - 2001/5

N2 - In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

AB - In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

KW - diode lasers

KW - vertical cavity surface emitting lasers

KW - semiconductor materials

KW - semiconductor lasers

KW - optical materials

KW - optical fibers

KW - mirrors

KW - laser modes

KW - gallium arsenide

KW - fiber lasers

KW - modelocking

KW - laser

KW - structure

KW - GaInNAs VCSEL

U2 - 10.1109/CLEO.2001.947787

DO - 10.1109/CLEO.2001.947787

M3 - Paper

SP - 267

EP - 268

ER -

Vysniauskas G, Hetterich M, Macaluso R, Burns D, Dawson MD, Bente EAJM et al. GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. 2001. Paper presented at Conference on Lasers and Electro-Optics, 2001. CLEO '01, Baltimore, United States. https://doi.org/10.1109/CLEO.2001.947787