(Ga,In)(N,As) laser structures using distributed feedback

C. Tombling (Inventor), A.H. Kean (Inventor), M.D. Dawson (Inventor), A. Kelly (Inventor), Kamelian Limited (Patent applicant) (Inventor)

Research output: Patent

Abstract

A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.
Original languageEnglish
Patent numberWO/2002/045221
Publication statusPublished - 6 Jun 2002

Keywords

  • distributed feedback grating
  • quantum well intermixing
  • focussed ion beam
  • quantum well
  • multi-quantum well

Cite this

Tombling, C., Kean, A. H., Dawson, M. D., Kelly, A., & Kamelian Limited (Patent applicant) (2002). (Ga,In)(N,As) laser structures using distributed feedback. (Patent No. WO/2002/045221).