(Ga,In)(N,As) laser structures using distributed feedback

C. Tombling (Inventor), A.H. Kean (Inventor), M.D. Dawson (Inventor), A. Kelly (Inventor), Kamelian Limited (Patent applicant) (Inventor)

Research output: Patent

Abstract

A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.
LanguageEnglish
Patent numberWO/2002/045221
Publication statusPublished - 6 Jun 2002

Fingerprint

quantum wells
lasers
ion beams
periodic variations
gratings
implantation
waveforms
lasing
energy levels
adjusting
insulators
damage
annealing

Keywords

  • distributed feedback grating
  • quantum well intermixing
  • focussed ion beam
  • quantum well
  • multi-quantum well

Cite this

Tombling, C., Kean, A. H., Dawson, M. D., Kelly, A., & Kamelian Limited (Patent applicant) (2002). (Ga,In)(N,As) laser structures using distributed feedback. (Patent No. WO/2002/045221).
Tombling, C. (Inventor) ; Kean, A.H. (Inventor) ; Dawson, M.D. (Inventor) ; Kelly, A. (Inventor) ; Kamelian Limited (Patent applicant) (Inventor). / (Ga,In)(N,As) laser structures using distributed feedback. Patent No.: WO/2002/045221.
@misc{a35427c436b84a3cb39aab4d88bc6b9b,
title = "(Ga,In)(N,As) laser structures using distributed feedback",
abstract = "A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.",
keywords = "distributed feedback grating, quantum well intermixing, focussed ion beam, quantum well, multi-quantum well",
author = "C. Tombling and A.H. Kean and M.D. Dawson and A. Kelly and {Kamelian Limited (Patent applicant)}",
year = "2002",
month = "6",
day = "6",
language = "English",
type = "Patent",
note = "WO/2002/045221",

}

Tombling, C, Kean, AH, Dawson, MD, Kelly, A & Kamelian Limited (Patent applicant) 2002, (Ga,In)(N,As) laser structures using distributed feedback, Patent No. WO/2002/045221.

(Ga,In)(N,As) laser structures using distributed feedback. / Tombling, C. (Inventor); Kean, A.H. (Inventor); Dawson, M.D. (Inventor); Kelly, A. (Inventor); Kamelian Limited (Patent applicant) (Inventor).

Patent No.: WO/2002/045221.

Research output: Patent

TY - PAT

T1 - (Ga,In)(N,As) laser structures using distributed feedback

AU - Tombling, C.

AU - Kean, A.H.

AU - Dawson, M.D.

AU - Kelly, A.

AU - Kamelian Limited (Patent applicant)

PY - 2002/6/6

Y1 - 2002/6/6

N2 - A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.

AB - A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region.

KW - distributed feedback grating

KW - quantum well intermixing

KW - focussed ion beam

KW - quantum well

KW - multi-quantum well

UR - http://www.wipo.int/pctdb/en/wo.jsp?wo=2002045221

M3 - Patent

M1 - WO/2002/045221

ER -

Tombling C, Kean AH, Dawson MD, Kelly A, Kamelian Limited (Patent applicant), inventors. (Ga,In)(N,As) laser structures using distributed feedback. WO/2002/045221. 2002 Jun 6.