Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide

Junyun Chen, Fei Ding, Xichun Luo, jining sun

Research output: Contribution to journalArticle

Abstract

Gallium arsenide (GaAs) components, ranging from the planar substrate to those possessing complicated shapes and microstructures, have attracted extensive interest regarding their applications in photovoltaic devices, photodetectors and emerging quantum devices. Single point diamond turning (SPDT) is regarded as an excellent candidate for an industrially viable mechanical machining process, as it can generate nano-smooth surfaces, even on some hard-to-machine brittle materials such as silicon and silicon carbide, with a single pass. However, the extremely low fracture toughness and strong anisotropic machinability of GaAs makes it difficult to obtain nano-smooth, crack-free machined surfaces. To bridge the current knowledge gaps in understanding the anisotropic machinability of GaAs, this paper studied the mechanical material properties of (001)-oriented GaAs through indentation tests, assuming the diagonals of the indenter acted in the similar way of the cutting edge of a diamond tool with a negative rake angle. The results showed that the (001) plane of the GaAs material displayed harder and more brittle when indented along direction I (one diagonal of indenter parallel to the <110> orientation) compared to direction II (one diagonal of indenter parallel to the <100> orientation), which coincides with anisotropic machined surface quality by SPDT. This finding reveals, for the first time, that the strong crystallographic orientation dependence of both hardness and fracture toughness represents the underlying mechanism for the anisotropic machinability of GaAs. The paper presents a novel approach to evaluate the critical depth of cut under a high cutting speed comparable to SPDT and to determine the maximum feed rate for ductile-regime diamond turning. The 26.57 nm critical depth of cut was obtained for the hardest cutting direction using a large negative rake angle diamond tool. Finally, a nano-smooth surface was successfully generated along all the orientations in ductile-regime diamond turning, in which the material remove mechanism is considered as plastic deformation caused by high-density dislocations and the subsurface layer without any cracks remains single crystal structure. The results proves the proposed evaluation approach for the critical depth of cut and the maximum allowed feed rate is highly effective for guiding the ductile-regime machining of brittle materials.
LanguageEnglish
Number of pages26
JournalPrecision Engineering
Publication statusAccepted/In press - 6 Nov 2019

Fingerprint

Gallium arsenide
Diamonds
Single crystals
Machinability
Brittleness
Semiconducting gallium arsenide
Fracture toughness
Machining
Cracks
Photodetectors
Indentation
Silicon carbide
Surface properties
Plastic deformation
Materials properties
Crystal structure
Hardness
Silicon
Microstructure
Substrates

Keywords

  • mechatronic
  • ductile-regime machining
  • precision manufacturing
  • diamond turning
  • gallium arsenide
  • anisotrophic

Cite this

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title = "Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide",
abstract = "Gallium arsenide (GaAs) components, ranging from the planar substrate to those possessing complicated shapes and microstructures, have attracted extensive interest regarding their applications in photovoltaic devices, photodetectors and emerging quantum devices. Single point diamond turning (SPDT) is regarded as an excellent candidate for an industrially viable mechanical machining process, as it can generate nano-smooth surfaces, even on some hard-to-machine brittle materials such as silicon and silicon carbide, with a single pass. However, the extremely low fracture toughness and strong anisotropic machinability of GaAs makes it difficult to obtain nano-smooth, crack-free machined surfaces. To bridge the current knowledge gaps in understanding the anisotropic machinability of GaAs, this paper studied the mechanical material properties of (001)-oriented GaAs through indentation tests, assuming the diagonals of the indenter acted in the similar way of the cutting edge of a diamond tool with a negative rake angle. The results showed that the (001) plane of the GaAs material displayed harder and more brittle when indented along direction I (one diagonal of indenter parallel to the <110> orientation) compared to direction II (one diagonal of indenter parallel to the <100> orientation), which coincides with anisotropic machined surface quality by SPDT. This finding reveals, for the first time, that the strong crystallographic orientation dependence of both hardness and fracture toughness represents the underlying mechanism for the anisotropic machinability of GaAs. The paper presents a novel approach to evaluate the critical depth of cut under a high cutting speed comparable to SPDT and to determine the maximum feed rate for ductile-regime diamond turning. The 26.57 nm critical depth of cut was obtained for the hardest cutting direction using a large negative rake angle diamond tool. Finally, a nano-smooth surface was successfully generated along all the orientations in ductile-regime diamond turning, in which the material remove mechanism is considered as plastic deformation caused by high-density dislocations and the subsurface layer without any cracks remains single crystal structure. The results proves the proposed evaluation approach for the critical depth of cut and the maximum allowed feed rate is highly effective for guiding the ductile-regime machining of brittle materials.",
keywords = "mechatronic, ductile-regime machining, precision manufacturing, diamond turning, gallium arsenide, anisotrophic",
author = "Junyun Chen and Fei Ding and Xichun Luo and jining sun",
year = "2019",
month = "11",
day = "6",
language = "English",
journal = "Precision Engineering",
issn = "0141-6359",

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Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide. / Chen, Junyun; Ding, Fei; Luo, Xichun; sun, jining.

In: Precision Engineering, 06.11.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide

AU - Chen, Junyun

AU - Ding, Fei

AU - Luo, Xichun

AU - sun, jining

PY - 2019/11/6

Y1 - 2019/11/6

N2 - Gallium arsenide (GaAs) components, ranging from the planar substrate to those possessing complicated shapes and microstructures, have attracted extensive interest regarding their applications in photovoltaic devices, photodetectors and emerging quantum devices. Single point diamond turning (SPDT) is regarded as an excellent candidate for an industrially viable mechanical machining process, as it can generate nano-smooth surfaces, even on some hard-to-machine brittle materials such as silicon and silicon carbide, with a single pass. However, the extremely low fracture toughness and strong anisotropic machinability of GaAs makes it difficult to obtain nano-smooth, crack-free machined surfaces. To bridge the current knowledge gaps in understanding the anisotropic machinability of GaAs, this paper studied the mechanical material properties of (001)-oriented GaAs through indentation tests, assuming the diagonals of the indenter acted in the similar way of the cutting edge of a diamond tool with a negative rake angle. The results showed that the (001) plane of the GaAs material displayed harder and more brittle when indented along direction I (one diagonal of indenter parallel to the <110> orientation) compared to direction II (one diagonal of indenter parallel to the <100> orientation), which coincides with anisotropic machined surface quality by SPDT. This finding reveals, for the first time, that the strong crystallographic orientation dependence of both hardness and fracture toughness represents the underlying mechanism for the anisotropic machinability of GaAs. The paper presents a novel approach to evaluate the critical depth of cut under a high cutting speed comparable to SPDT and to determine the maximum feed rate for ductile-regime diamond turning. The 26.57 nm critical depth of cut was obtained for the hardest cutting direction using a large negative rake angle diamond tool. Finally, a nano-smooth surface was successfully generated along all the orientations in ductile-regime diamond turning, in which the material remove mechanism is considered as plastic deformation caused by high-density dislocations and the subsurface layer without any cracks remains single crystal structure. The results proves the proposed evaluation approach for the critical depth of cut and the maximum allowed feed rate is highly effective for guiding the ductile-regime machining of brittle materials.

AB - Gallium arsenide (GaAs) components, ranging from the planar substrate to those possessing complicated shapes and microstructures, have attracted extensive interest regarding their applications in photovoltaic devices, photodetectors and emerging quantum devices. Single point diamond turning (SPDT) is regarded as an excellent candidate for an industrially viable mechanical machining process, as it can generate nano-smooth surfaces, even on some hard-to-machine brittle materials such as silicon and silicon carbide, with a single pass. However, the extremely low fracture toughness and strong anisotropic machinability of GaAs makes it difficult to obtain nano-smooth, crack-free machined surfaces. To bridge the current knowledge gaps in understanding the anisotropic machinability of GaAs, this paper studied the mechanical material properties of (001)-oriented GaAs through indentation tests, assuming the diagonals of the indenter acted in the similar way of the cutting edge of a diamond tool with a negative rake angle. The results showed that the (001) plane of the GaAs material displayed harder and more brittle when indented along direction I (one diagonal of indenter parallel to the <110> orientation) compared to direction II (one diagonal of indenter parallel to the <100> orientation), which coincides with anisotropic machined surface quality by SPDT. This finding reveals, for the first time, that the strong crystallographic orientation dependence of both hardness and fracture toughness represents the underlying mechanism for the anisotropic machinability of GaAs. The paper presents a novel approach to evaluate the critical depth of cut under a high cutting speed comparable to SPDT and to determine the maximum feed rate for ductile-regime diamond turning. The 26.57 nm critical depth of cut was obtained for the hardest cutting direction using a large negative rake angle diamond tool. Finally, a nano-smooth surface was successfully generated along all the orientations in ductile-regime diamond turning, in which the material remove mechanism is considered as plastic deformation caused by high-density dislocations and the subsurface layer without any cracks remains single crystal structure. The results proves the proposed evaluation approach for the critical depth of cut and the maximum allowed feed rate is highly effective for guiding the ductile-regime machining of brittle materials.

KW - mechatronic

KW - ductile-regime machining

KW - precision manufacturing

KW - diamond turning

KW - gallium arsenide

KW - anisotrophic

UR - https://www.sciencedirect.com/journal/precision-engineering

M3 - Article

JO - Precision Engineering

T2 - Precision Engineering

JF - Precision Engineering

SN - 0141-6359

ER -