Frequency/temperature characteristics of Gunn devices

R. Davies, William Gurney, A. Mircea

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has limited the application of these devices. The letter outlines a program of experiments and computer simulations aimed at achieving an understanding of the basic ¿f/¿T mechanism and thus producing a deep stable oscillator. Our simulations successfully predict observed trends in the ¿f/¿T behaviour of Gunn devices with both alloyed metal and n+ regrown contacts. The results of our study show that stable oscillators with a small loaded Q factor and near maximum power output are realisable.
Original languageEnglish
Pages (from-to)349-351
Number of pages3
JournalElectronics Letters
Volume8
Issue number14
DOIs
Publication statusPublished - 13 Jul 1972

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Gunn devices
Gunn oscillators
Computer simulation
Metals
Experiments
Temperature

Keywords

  • Gunn devices
  • frequency stability
  • thermal effects
  • computer simulations

Cite this

Davies, R. ; Gurney, William ; Mircea, A. . / Frequency/temperature characteristics of Gunn devices. In: Electronics Letters. 1972 ; Vol. 8, No. 14. pp. 349-351.
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Frequency/temperature characteristics of Gunn devices. / Davies, R.; Gurney, William; Mircea, A. .

In: Electronics Letters, Vol. 8, No. 14, 13.07.1972, p. 349-351.

Research output: Contribution to journalArticle

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AU - Gurney, William

AU - Mircea, A.

PY - 1972/7/13

Y1 - 1972/7/13

N2 - The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has limited the application of these devices. The letter outlines a program of experiments and computer simulations aimed at achieving an understanding of the basic ¿f/¿T mechanism and thus producing a deep stable oscillator. Our simulations successfully predict observed trends in the ¿f/¿T behaviour of Gunn devices with both alloyed metal and n+ regrown contacts. The results of our study show that stable oscillators with a small loaded Q factor and near maximum power output are realisable.

AB - The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has limited the application of these devices. The letter outlines a program of experiments and computer simulations aimed at achieving an understanding of the basic ¿f/¿T mechanism and thus producing a deep stable oscillator. Our simulations successfully predict observed trends in the ¿f/¿T behaviour of Gunn devices with both alloyed metal and n+ regrown contacts. The results of our study show that stable oscillators with a small loaded Q factor and near maximum power output are realisable.

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KW - frequency stability

KW - thermal effects

KW - computer simulations

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