Abstract
The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has limited the application of these devices. The letter outlines a program of experiments and computer simulations aimed at achieving an understanding of the basic ¿f/¿T mechanism and thus producing a deep stable oscillator. Our simulations successfully predict observed trends in the ¿f/¿T behaviour of Gunn devices with both alloyed metal and n+ regrown contacts. The results of our study show that stable oscillators with a small loaded Q factor and near maximum power output are realisable.
| Original language | English |
|---|---|
| Pages (from-to) | 349-351 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 8 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 13 Jul 1972 |
Keywords
- Gunn devices
- frequency stability
- thermal effects
- computer simulations